SCT3120AW7 [ROHM]
SCT3120AW7是650V 21A的Nch SiC功率MOSFET。采用沟槽结构,降低了导通电阻。 SiC支持页面评估板、文件 应用实例介绍罗姆制SiC元器件 何谓SiC功率元器件?电子小知识;型号: | SCT3120AW7 |
厂家: | ROHM |
描述: | SCT3120AW7是650V 21A的Nch SiC功率MOSFET。采用沟槽结构,降低了导通电阻。 SiC支持页面评估板、文件 应用实例介绍罗姆制SiC元器件 何谓SiC功率元器件?电子小知识 电子 |
文件: | 总17页 (文件大小:1406K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SCT3120AW7
Datasheet
N-channel SiC power MOSFET
lOutline
TO-263-7L
VDSS
650V
120mΩ
21A
RDS(on) (Typ.)
*1
ID
PD
100W
lInner circuit
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Embossed tape
Packing
lApplication
・Solar inverters
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
330
24
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Type
1000
TL
SCT3120AW7
Marking
lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified)
Parameter
Drain - Source Voltage
Symbol
VDSS
Value
650
21
Unit
V
*1
Tc = 25°C
A
ID
Continuous Drain current
*1
Tc = 100°C
15
A
ID
*2
Pulsed Drain current (Tc = 25°C)
Gate - Source voltage (DC)
52
A
ID,pulse
VGSS
-4 to +22
-4 to +26
0 / +18
V
V
*3
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
VGSS_surge
*4
V
VGS_op
Tvj
Virtual Junction temperature
175
°C
°C
Tstg
Range of storage temperature
-55 to +175
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©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
TSQ50252-SCT3120AW7
1.Nov.2022 - Rev.002
1/15
SCT3120AW7
Datasheet
lElectrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
VGS = 0V, ID = 1mA
Drain - Source breakdown
voltage
V(BR)DSS Tvj = 25°C
Tvj = -55°C
650
650
-
-
-
-
VGS = 0V, VDS
IDSS Tvj = 25°C
Tvj = 150°C
=650V
Zero Gate voltage
Drain current
-
-
1
2
10
-
μA
Gate - Source
leakage current
IGSS+ VGS
IGSS- VGS
=
=
V
DS = 0V
+22V,
-4V,
-
-
100
nA
Gate - Source
leakage current
VDS = 0V
-
-
-
-100
5.6
nA
V
VGS (th) VDS = 10V, I =
Gate threshold voltage
3.33mA
6.7A
2.7
D
VGS = 18V, I =
D
Static Drain - Source
on - state resistance
*5
Tvj = 25°C
RDS(on)
-
-
-
120
172
18
156
mΩ
Ω
Tvj = 150°C
-
-
RG
Gate input resistance
f = 1MHz, open drain
lThermal resistance
Values
Typ.
Parameter
Symbol
RthJC
Unit
K/W
Min.
-
Max.
1.5
Thermal resistance, junction - case*6
1.17
lTypical Transient Thermal Characteristics
Symbol
Rth1
Value
Unit
Symbol
Value
1.38×10
1.40×10
8.68×10
Unit
1.95×10 -1
3.47×10 -1
5.60×10 -1
-3
-2
-3
Cth1
Cth2
Cth3
Rth2
K/W
Ws/K
Rth3
Rth,n
Rth1
Tj
Tc
PD
Cth1
Cth2
Cth,n
Ta
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TSQ50252-SCT3120AW7
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SCT3120AW7
Datasheet
lElectrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Typ.
2.7
Parameter
Symbol
Conditions
VDS = 10V, I =
Unit
S
Min.
Max.
*5
Transconductance
6.7A
-
-
-
-
-
-
-
-
gfs
D
Ciss VGS = 0V
Coss VDS
Input capacitance
460
35
=
Output capacitance
Reverse transfer capacitance
500V
pF
pF
Crss
f = 1MHz
VGS = 0V
16
Effective output capacitance,
energy related
Co(er)
-
70
-
VDS
VDS
=
=
0V to 300V
300V
6.7A
*5
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
-
-
-
-
-
-
-
-
-
38
10
18
6
-
-
-
-
-
-
-
-
-
Qg
ID =
*5
nC
Qgs
VGS = 18V
See Fig. 1-1.
*5
Qgd
VDS
=
400V
*5
td(on)
ID =
5.0A
*5
14
19
11
49
4
tr
VGS
=
0V/+18V
0Ω, L = 750μH
ns
RG =
*5
Turn - off delay time
Fall time
td(off)
Lσ = 50nH, Cσ = 10pF
See Fig. 2-1, 2-2, 2-3.
*5
tf
Eon includes diode
reverse recovery.
*5
Turn - on switching loss
Turn - off switching loss
Eon
Eoff
μJ
*5
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TSZ22111・15・001
TSQ50252-SCT3120AW7
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SCT3120AW7
Datasheet
lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
A
Min.
-
Typ.
-
Max.
21
Body diode continuous,
forward current
*1
IS
Tc = 25°C
Body diode direct current,
pulsed
*2
-
-
-
-
52
-
A
V
ISM
*5
VGS = 0V, IS
Forward voltage
= 6.7A
3.2
11
VSD
IF =
5.0A
*5
Reverse recovery time
-
ns
trr
VR =
400V
*5
Reverse recovery charge
-
-
133
11
-
-
nC
A
Qrr
di/dt = 2500A/μs
Lσ = 50nH, Cσ = 10pF
See Fig. 3-1, 3-2.
*5
Peak reverse recovery current
Irrm
*1 Limited by maximum Tvj and for Max. RthJC
.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable VGS waveform
Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.
*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.
*5 Pulsed
*6 The case is bottom of leadframe underneath the chip. Practial value of Rth(j-c) is influenced
by design of the user. Discribed value is only vaild at the specific conditions such as JESD51-14.
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TSQ50252-SCT3120AW7
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
Operation in this area is limited by RDS(on)
100
80
60
40
20
0
10
PW = 1μs*
PW = 10μs*
PW = 100μs
PW = 1ms
1
PW = 10ms
Tc = 25ºC
Single Pulse
*Calculation(PW10μs)
0.1
25
75
125
175
0.1
1
10
100
1000
Case Temperature : TC [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Impedance vs. Pulse Width
10
1
0.1
0.01
Tc = 25ºC
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width : PW [s]
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
10
20
20V
18
20V
Tvj = 25ºC
9
Pulsed
18V
18V
Tvj = 25ºC
Pulsed
16
14
12
10
8
8
7
6
5
4
3
2
1
0
14V
16V
16V
14V
12V
12V
10V
6
10V
4
VGS= 8V
2
VGS= 8V
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics
0
Tvj = 25ºC
Pulsed
-2
-4
VGS = -4V
VGS = -2V
VGS = 0V
-6
VGS = 18V
-8
-10
-12
-14
-16
-18
-20
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.7 Tvj = 150ºC Typical Output
Characteristics(I)
Fig.8 Tvj = 150ºC Typical Output
Characteristics(II)
20
10
20V
20V
18V
16V
14V
18
16
14
12
10
8
9
8
7
6
5
4
3
2
1
0
14V
12V
10V
18V
16V
Tvj = 150ºC
Pulsed
12V
10V
VGS= 8V
6
VGS= 8V
4
Tvj = 150ºC
Pulsed
2
0
0
1
2
3
4
5
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.9 Tvj = 150ºC 3rd Quadrant
Characteristics
Fig.10 Body Diode Forward Voltage
ꢀꢀꢀ vs. Gate - Source Voltage
0
6
Tvj = 150ºC
Pulsed
-2
ID=6.7A
5
4
3
2
1
0
-4
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-6
-8
-10
-12
-14
-16
-18
-20
Tvj= 150ºC
Tvj= 25ºC
-10
-8
-6
-4
-2
0
-4
0
4
8
12
16
20
Drain - Source Voltage : VDS [V]
Gate - Source Voltage : VGS [V]
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TSQ50252-SCT3120AW7
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.11 Typical Transfer Characteristics (I)
100
Fig.12 Typical Transfer Characteristics (II)
20
18
16
14
12
10
8
VDS = 10V
Pulsed
VDS = 10V
Pulsed
10
1
Tvj= 150ºC
Tvj= 75ºC
Tvj= 25ºC
Tvj= 150ºC
Tvj= 75ºC
Tvj= 25ºC
Tvj= -25ºC
6
Tvj= -25ºC
0.1
4
2
0
0.01
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Virtual Junction Temperature
Fig.14 Transconductance vs. Drain Current
10
6
VDS = 10V
ID = 3.33mA
VDS = 10V
Pulsed
5
4
3
2
1
0
1
Tvj = 150ºC
Tvj = 75ºC
Tvj = 25ºC
Tvj = -25ºC
0.1
-50
0
50
100
150
200
0.1
1
10
Virtual Junction Temperature : Tvj [ºC]
Drain Current : ID [A]
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Virtual Junction Temperature
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0.48
Tvj = 25ºC
Pulsed
VGS = 18V
Pulsed
0.42
ID= 14A
ID= 6.7A
0.36
ID= 14A
0.30
ID= 6.7A
0.24
ID= -6.7A
0.18
ID= -6.7A
0.12
0.06
0.00
-50
0
50
100
150
200
8
10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Virtual Junction Temperature : Tvj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Virtual Junction Temperature
1
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.1
Tvj = 150ºC
Tvj = 125ºC
Tvj = 75ºC
Tvj = 25ºC
Tvj = -25ºC
VGS = 18V
Pulsed
0.01
1
10
100
-50
0
50
100
150
200
Drain Current : ID [A]
Virtual Junction Temperature : Tvj [ºC]
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.19 Typical Capacitance
ꢀꢀꢀꢀꢀvs. Drain - Source Voltage
Fig.20 Coss Stored Energy
6
10000
Tvj = 25ºC
5
1000
Ciss
4
3
2
1
0
Coss
100
Crss
10
Tvj = 25ºC
f = 1MHz
VGS = 0V
1
0
100
200
300
400
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
20
*Gate Charge Waveform
Tvj = 25ºC
VDD = 300V
ID = 6.7A
15
10
5
Pulsed
0
0
10
20
30
40
Total Gate Charge : Qg [nC]
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TSQ50252-SCT3120AW7
1.Nov.2022 - Rev.002
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SCT3120AW7
Datasheet
lElectrical characteristic curves
Fig.22 Typical Switching Time
Fig.23 Typical Switching Loss
ꢀꢀꢀꢀꢀvs. External Gate Resistance
ꢀꢀꢀꢀꢀvs. Drain - Source Voltage
60
60
Tvj = 25°C
ID = 5.0A
VGS= +18V/0V
RG = 0Ω
Tvj = 25°C
td(off)
VDD= 400V
VGS= +18V/0V
ID = 5.0A
50
50
40
30
20
10
0
tr
L = 750μH
40
L = 750μH
Eon
30
tf
20
td(on)
10
Eoff
0
100
200
300
400
500
0
10
20
30
External Gate Resistance : RG [Ω]
Drain - Source Voltage : VDS [V]
Fig.24 Typical Switching Loss
Fig.25 Typical Switching Loss
ꢀꢀꢀꢀꢀvs. Drain Current
ꢀꢀꢀꢀꢀvs. External Gate Resistance
200
200
Tvj = 25°C
VDD= 400V
VGS= +18V/0V
Tvj = 25°C
ID = 5.0A
VDD= 400V
150
150
RG = 0Ω
VGS= +18V/0V
L = 750μH
L = 750μH
Eon
100
100
Eon
50
50
0
Eoff
Eoff
0
0
5
10
15
20
25
30
0
10
20
30
Drain Current : ID [A]
External Gate Resistance : RG [Ω]
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TSZ22111・15・001
TSQ50252-SCT3120AW7
1.Nov.2022 - Rev.002
11/15
SCT3120AW7
Datasheet
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge Measurement Circuit
Fig.2-1 Switching Characteristics Measurement Circuit
Fig.2-2 Waveforms for Switching Time
Fig.2-3 Waveforms for Switching Energy Loss
Eon
=
I ∙ VDS dt
Eoff
=
ID ∙ VDS dt
D
Vsurge
Irr
VDS
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit
Fig.3-2 Reverse Recovery Waveform
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SCT3120AW7
Datasheet
lPackage Dimensions
Unit: mm
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Datasheet
RECOMMENDED FOOTPRINT DIMENSIONS
Unit: mm
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Datasheet
lDie Bonding Layout
: Die position
・Front view of the packaging.
・Dimensions are design values.
・If the heat sink is to be installed, it should be in contact with the die bonding point.
Unit: mm
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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