SG7110WN (新产品) [ROHM]
Application: General Inverter for Automotive and Industrial Use, Heater for Automotive For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.;
| 型号： | SG7110WN (新产品) |
| 厂家： | 
ROHM |
| 描述： | Application: General Inverter for Automotive and Industrial Use, Heater for Automotive For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now. |
| 文件： | 总5页 (文件大小：1764K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SG7110WN
650V 75A Insulated Gate Bipolar Transistor
Datasheet
lOutline
Wafer (W05)
Unsawn on foil (U03)
VCES
IC (Nominal)
650V
75A
VCE(sat) (Typ.)
1.7V
Notch side
Max. Possible Chips per Wafer
812pcs
lFeatures
lInner Circuit
1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) Short Circuit Withstand Time 8μs
(2)
(1) Gate
(2) Collector
(3) Emitter
(1)
(3)
lApplication
General Inverter
for Automotive and Industrial Use
Heater for Automotive
lAbsolute Maximum Ratings
Parameter
Symbol
Value
650
Unit
Collector - Emitter Voltage, Tj = 25°C
Gate - Emitter Voltage
VCES
VGES
V
V
±30
*1
*1)
Collector Current
A
IC
*2
Pulsed Collector Current
225
A
ICP
Tj
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
-40 to +175
°C
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2023.02 - Rev.A
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Datasheet
SG7110WN
lDesign Assurance
Values
Typ.
Parameter
Symbol
Conditions
CC ≦ 360V,
Unit
Min.
8
Max.
-
V
*3
VGE = 15V,
Short Circuit Withstand Time
Short Circuit Withstand Time
-
-
μs
tsc
Tj = 25℃
VCC ≦ 360V,
*3
VGE = 15V,
6
-
μs
tsc
Tj = 150℃
IC = 225A, VCC = 520V,
VP = 650V, VGE = 15V,
RG = 50Ω, Tj = 175℃
Reverse Bias Safe Operating
Area
RBSOA*3
FULL SQUARE
-
*3 Design assurance without measurement
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
650
Typ.
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
ICES VCE = 650V, VGE = 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 3.5mA
-
Collector Cut - off Current
-
-
-
-
10
±200
7.0
μA
nA
V
Gate - Emitter Leakage
Current
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 75A, VGE = 15V,
Collector - Emitter Saturation
Voltage
*3
Tj = 25°C
VCE(sat)
-
-
-
-
-
-
-
-
1.70
2.20
2320
168
23
2.15
V
Tj = 175°C
Cies VCE = 30V,
Coes VGE = 0V,
-
-
-
-
-
-
-
Input Capacitance
Output Capacitance
pF
nC
Cres
Qg
Reverse transfer Capacitance
Total Gate Charge
f = 1MHz
VCE = 300V,
79
Qge IC = 75A,
Qgc VGE = 15V
Gate - Emitter Charge
Gate - Collector Charge
21
33
*3 Design assurance without measurement
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© 2023 ROHM Co., Ltd. All rights reserved.
2023.02 - Rev.A
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Datasheet
SG7110WN
lChip Information
Unit : μm
: Pad Area
①
②
: Gate Bonding Pad
: Emitter Bonding Pad
Backside : Collector
0.10±0.03
Wafer Size
200mm
Wafer Thickness
Chip Size
0.08±0.01mm
5.70mm×5.70mm
0.10±0.03mm
AlCu:4.4μm
Cut Line Width
Top Side Metallization
Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm
Passivation Polyimide
5.70
Unit：mm
lFurther Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design
and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
RGSX5TS65
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© 2023 ROHM Co., Ltd. All rights reserved.
2023.02 - Rev.A
3/3
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
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4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
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R1107
S
Daattaasshheeeett
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Notice – WE
Rev.001
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