SH8K32 [ROHM]

4V Drive Nch+Nch MOSFET; 4V驱动N沟道+ N沟道MOSFET


型号：	SH8K32
厂家：	ROHM
描述：	4V Drive Nch+Nch MOSFET 4V驱动N沟道+ N沟道MOSFET 驱动
文件：	总5页 (文件大小：177K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

4V Drive Nch+Nch MOSFET

SH8K32

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

SOP8

Features

1) Built-in G-S Protection Diode.

2) Small surface Mount Package (SOP8).

Application

Switching

Each lead has same dimensions

Packaging specifications

Inner circuit

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

SH8K32

∗2

(1) (2) (3) (4)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1

(1)

(2)

(3)

(4)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

Absolute maximum ratings (Ta=25C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

Pulsed

4.5

Drain current

∗1

I_DP

1.0

Source current

(Body diode)

Continuous

Pulsed

I_S

∗1

∗2

I_SP

W/TOTAL

°C

Total power dissipation

Channel temperature

P_D

2.0

Tch

Tstg

150

Range of storage temperature

∗1 Pw 10μs, Duty cycle 1%

∗2 Mounted on a ceramic board.

−55 to +150

°C

www.rohm.com

2009.12 - Rev.A

1/4

SH8K32

Data Sheet

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max.

Conditions

μA V_GS= 20V, V_DS=0V

I_D= 1mA, V_GS=0V

μA V_DS= 60V, V_GS=0V

_DS= 10V, I_D= 1mA

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}60

Zero gate voltage drain current

Gate threshold voltage

I_DSS

−

1.0

−

500

120

7.0

1.6

2.5

V_{GS (th)}

2.5

−

mΩ I_D= 4.5A, V_GS= 10V

mΩ I_D= 4.5A, V_GS= 4.5V

mΩ I_D= 4.5A, V_GS= 4.0V

Static drain-source on-state

resistance

∗

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

4.0

_DS= 10V, I_D= 4.5A

−

_DS= 10V

C_oss

C_rss

t_{d (on)}

_GS=0V

f=1MHz

∗

VDD 30V

= 2.3A

GS= 10V

= 13Ω

=10Ω

Turn-off delay time

Fall time

t_{d (off)}

∗

t_f

Total gate charge

Gate-source charge

Q_g

nC V_DD30V, V_GS= 5V

∗

Q_gs

Q_gd

−

nC I_D= 4.5A

Gate-drain charge

nC R_L= 6.7Ω, R_G= 10Ω

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter

Forward voltage

Symbol Min. Typ. Max.

Conditions

I_S=4.5A, V_GS=0V

Unit

∗

V_SD

−

1.2

∗Pulsed

www.rohm.com

2009.12 - Rev.A

2/4

SH8K32

Data Sheet

Electrical characteristic curves

100

1000

DS=10V

Ta=25°C

Pulsed

GS=10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

GS=4.0V

GS=4.5V

GS=10V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

0.1

100

0.01

0.001

0.0001

0.00001

0.01

0.5

1.0

1.5

2.0

2.5

3.0

0.1

GATE-SOURCE VOLTAGE : VGS (V)

Fig.1 Typical Transfer Characteristics

DRAIN CURRENT : I

(A)

DRAIN CURRENT : ID (A)

Fig.2 Static Drain-Source

On-State Resistance

Fig.3 Static Drain-Source

On-State Resistance

vs. Drain Current(

)

vs. Drain Current(ΙΙ)

1000

GS=0V

GS=4.5V

GS=4V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

100

0.1

0.01

0.1

0.5

1.0

1.5

0.1

DRAIN CURRENT : I

(A)

SOURCE-DRAIN VOLTAGE : VSD (V)

DRAIN CURRENT : ID (A)

Fig.5 Static Drain-Source

On-State Resistance

vs. Drain Current(IV)

Fig.6 Source Current vs.

Source-Drain Voltage

Fig.4 Static Drain-Source

On-State Resistance

vs. Drain Current(ΙΙΙ

)

10000

300

Ta=25°C

DD=30V

GS=10V

DD=30V

Pulsed

=4.5A

=10Ω

G=10Ω

1000

100

=4.5A

Pulsed

200

100

D=2.25A

d (off)

d (on)

0.01

0.1

DRAIN CURRENT : I

(A)

TOTAL GATE CHARGE : Qg (nC)

GATE-SOURCE VOLTAGE : VGS (V)

Fig.8 Switching Characteristics

Fig.9 Dynamic Input Characteristics

Fig.7 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

www.rohm.com

2009.12 - Rev.A

3/4

SH8K32

Data Sheet

10000

1000

100

Ta=25°C

f=1MHz

GS=0V

Ciss

oss

rss

0.1

100

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.10 Typical Capacitance

vs. Drain-Source Voltage

Measurement circuits

Pulse Width

90%

VGS

VDS

50%

10%

50%

D.U.T.

10%

90%

d(on)

td(off)

off

Fig.1-1 Switching Time Test Circuit

Fig.1-2 Switching Time Waveforms

VDS

D.U.T.

G (Const.)

Qgd

VDD

Charge

Fig.2-1 Gate Charge Test Circuit

Fig.2-2 Gate Charge Waveform

www.rohm.com

2009.12 - Rev.A

4/4

Notice

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consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

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Please be sure to implement in your equipment using the Products safety measures to guard

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R0039

SH8K32 [ROHM]

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