SP8K22 [ROHM]
Switching (45V, 4.5A); 开关（ 45V ， 4.5A ）
| 型号： | SP8K22 |
| 厂家： | 
ROHM |
| 描述： | Switching (45V, 4.5A) |
| 文件： | 总5页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SP8K22
Transistor
Switching (45V, 4.5A)
SP8K22
zFeatures
zExternal dimensions (Unit : mm)
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
SOP8
5.0 0.2
zApplications
Power switching , DC / DC converter , Inverter
0.2 0.1
zStructure
0.4 0.1
1.27
0.1
Silicon N-channel
MOS FET
Each lead has same dimensions
zPackaging dimensions
Package
Taping
TB
Code
Basic ordering unit(pieces)
2500
zAbsolute maximum ratings (Ta=25°C)
zEquivalent circuit
It is the same ratings for the Tr. 1 and Tr. 2.
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
45
20
V
∗2
∗2
(1) (2) (3) (4)
Continuous
Pulsed
±4.5
A
Drain current
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
*1
IDP
±18
A
ꢀ
∗1
∗1
IS
Continuous
Pulsed
1
A
Source current
(Body diode)
A
ꢀ*1
*2
ISP
(1)
(2)
(3)
(4)
18
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
2
1.4
W/TOTAL
PD
Total power dissipation
Chanel temperature
W/ELEMENT*2
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
oC
oC
Tch
150
Range of Storage temperature
*1 PW≦10µｓ、Duty cycle≦1%
*2 Mounted on a ceramic board
Tstg
-55 to +150
1/4
SP8K22
Transistor
zElectrical characteristics (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Condition
Symbol
IGSS
Min.
－
45
－
1.0
－
－
－
3.5
－
－
－
－
－
－
－
－
－
－
Typ.
－
Max.
10
－
1
Unit
µA
V
VGS=20V/VDS=0V
ID=1mA/VGS=0V
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V(BR)DSS
IDSS
－
V
DS=45V/VGS=0V
DS=10V/ID=1mA
－
µA
V
V
VGS(th)
2.5
46
57
64
－
－
－
－
－
－
－
－
9.6
－
－
－
ID=4.5A/VGS=10V
ID=4.5A/VGS=4.5V
ID=4.5A/VGS=4.0V
VDS=10V/ID=4.5A
33
Static drain-source on-state
resistance
RDS(on)
*
*
41
mΩ
S
46
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
|Yfs|
Ciss
Coss
Crss
td(on)
tr
－
550
140
70
VDS=10V
VGS=0V
f=1MHz
pF
*
*
*
*
*
*
*
12
V
DD=25V
ID=2.5A
VGS=10V
18
ns
Turn-off delay time
Fall time
td(off)
tf
42
RL=10Ω/RG=10Ω
12
Total gate charge
Gate-source charge
Gate-drain charge
VDD=25V/ID=4.5A
VGS=5V
Qg
6.8
2.0
2.9
nC
Qgs
Qgd
RL=5.6Ω/RG=10Ω
* pulsed
Body diode characteristics (Source-Drain)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Forward voltage
* pulsed
Condition
Symbol
VSD
Min.
Typ.
Max.
1.2
Unit
V
IS=4.5A/VGS=0V
*
－
－
2/4
SP8K22
Transistor
zElectrical characteristic curves
1000
100
10
1000
100
10
10
VGS=4.5V
pulsed
Ta=125oC
75oC
25oC
-25oC
VGS=10V
pulsed
VDS=10V
pulsed
1
0.1
Ta=125oC
o
ꢀꢀꢀ
ꢀꢀꢀ
ꢀꢀ
75 C
o
25 C
o
Ta=125oC
75oC
-25 C
25oC
-25oC
0.01
1
1
0.01
0.1
1
10
0.01
0.1
1
10
1.0
1.5
2.0
2.5
3.0
3.5
Drain Current : ID [A]
Drain Current : ID [A]
Gate-Source Voltage : VGS [V]
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
Fig.1 Typical Transfer Characteristics
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
200
10
1000
Ta=25oC
VGS=0V
VGS=4V
pulsed
pulsed
pulsed
150
Ta=125oC
75oC
100
1
0.1
25oC
-25oC
100
ID=4.5A
Ta=125oC
7
10
75oC
25oC
50
-25oC
ID=2.25A
0
1
0.01
0.01
0.1
1
10
0
0.5
1
1.5
0
5
10
15
Drain Current : ID [A]
Source-Drain Voltage : VSD [V]
Gate-Source Voltage : VGS [V]
Fig.4 Static Drain-Source On-State
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source-Current vs.
Source-Drain Voltage
Resistance vs. Drain Current (3)
10000
1000
100
10000
1000
100
10
10
Ta=25oC
VDD=25V
Ta=25oC
f=1MHz
VGS=0V
Ta=25oC
VDD=25V
V
GS=10V
8
6
4
2
0
ID=4.5A
RG=10Ω
Pulsed
tf
R =10
Ω
G
Ciss
Pulsed
td(off)
Coss
td(on)
tr
Crss
10
1
0.01
0.1
1
10
100
0
2
4
6
8
10
12
0.01
0.1
1
10
Drain Current : ID [A]
Drain-Source Voltage : VDS [V]
Total Gate Charge : Qg [nC]
Fig.8 Switching Characteristics
Fig.7 Typical capacitance vs.
Source-Drain Voltage
Fig.9 Dynamic Input Characteristics
3/4
SP8K22
Transistor
zMeasurement circuits
Pulse Width
90%
V
GS
I
D
V
DS
50%
10%
50%
10%
V
GS
DS
RL
V
10%
D.U.T.
RG
V
DD
90%
90%
t
d(on)
td(off)
t
r
tr
t
on
t
off
Fig.11 Switching Time Waveforms
Fig.10 Switching Time Test Circuit
VG
VGS
I
D
V
DS
Q
g
RL
V
GS
I
G (Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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