SST6839T216 [ROHM]

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,;
SST6839T216
型号: SST6839T216
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,

放大器 光电二极管 晶体管
文件: 总3页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SST6839  
Transistors  
PNP general purpose transistor  
SST6839  
zFeatures  
1) BVCEO < 40V (I  
2) Complements the SST6838.  
zExternal dimensions (Unit : mm)  
C
= 1mA)  
SST6839  
2.9  
±
±
0.2  
0.2  
2  
0.1  
1.9  
±
0.95 0.95  
zPackage, marking and packaging specifications  
(2)  
(1)  
0~0.1  
0.2Min.  
Part No.  
Packaging type  
Marking  
SST6839  
SST3  
RFQ  
(3)  
Ave  
thmensions  
0.15  
+
0.1  
T116  
Code  
0.06  
0.4  
(1) Emitter  
(Base  
0.5  
Basic ordering unit (pieces)  
3000  
3) Collector  
ROHM : S3  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
50  
40  
5  
U
V
VCBO  
VCEO  
VEBO  
V
V
I
C
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0
W
°C  
Tj  
150  
Tstg  
5to +150  
zElectrical characteristics (=25C)  
Parameter  
Symbol  
Mi
p.  
Max.  
Unit  
Conditions  
Collector-base breakdown ve  
Collector-emitter wn vo
BVCBO  
BVCEO  
50  
100  
100  
140  
3.5  
17  
0.5  
5  
0.5  
5  
0.5  
0.7  
V
V
I
C
= −10µA  
= −1mA  
(Ta= −40°C to +125°C  
(Ta= −40°C to +125°C  
(Ta=85°C  
)
)
)
)
)
)
)
)
)
)
)
)
)
)
)
IC  
V
CB= −30V  
CB= −30V  
Collector cutoff
ICBO  
µA  
µA  
V
V
(Ta=125°C  
(Ta=85°C  
(Ta=125°C  
(Ta=85°C  
VE  
B
B
B
B
= −4V  
= −4V  
= −100mA/10mA  
= −100mA/10mA  
Emitter cutoff current  
BO  
VE  
I
C
/I  
/I  
Colletmitter saturation voltage  
VC)  
I
C
(Ta=125°C  
V
V
V
V
CE/I  
CE/I  
CE/I  
CE/I  
C= −5V/1mA  
C= −5V/1mA  
C= −5V/1mA  
C= −5V/100mA  
(Ta= −40°C to +25°C  
(Ta=85°C  
(Ta=125°C  
(Ta= −40°C to +25°C  
(Ta=25°C  
ent transfer ratio  
h
h
FE1  
FE2  
800  
1000  
DC current transfer ratio  
Transition frequency  
MHz  
pF  
f
T
V
V
V
CE= −12V , I  
CB= −12V , I  
EB= −0.5V , I  
C
= −2mA , f= 100MHz  
= 0A , f= 1MHz  
= 0A , f= 1MHz  
Collector output capacitance  
Emitter input capacitance  
Cob  
Cib  
E
(Ta=25°C  
(Ta=25°C  
pF  
C
Rev.A  
1/2  
SST6839  
Transistors  
zElectrical characteristic curves  
35.0  
100  
80  
50  
10  
8  
V
CE= 6V  
Ta=25˚C  
Ta=25˚C  
Ta=100˚C  
25˚C  
31.5  
28.0  
24.5  
21.0  
17.5  
14.0  
10.5  
7.0  
20  
10  
500  
450  
400  
350  
300  
40˚C  
5  
250  
0  
60  
40  
20  
6  
4  
2  
2  
1  
0  
100  
0.5  
50µA  
3.5µA  
0.2  
0.1  
I
B=0  
IB=0  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
BASE TO EMITTER VOLTAGE : VBE  
0
0.4  
0.8  
1.2  
1.6 2.0  
0
3  
4  
5  
COOR TEMITTER VOLTAGE : VCE (V)  
(
V)  
COLLECTOR TO MITTER VOLTAGE : VCE (V)  
Fig.2 Grounded emitter output  
characteristics (I)  
Fig.1 Grounded emitter propagation  
characteristics  
FGounded emitter output  
characteristics (II)  
500  
1  
500  
Ta=25˚C  
Ta=100˚C  
25˚C  
V
CE= 5V  
3V  
1V  
Ta=25˚C  
0
˚C  
200  
100  
5
200  
100  
0.1  
I
C/I  
B
=
50  
20  
10  
50  
0.05  
V
CE= 6V  
0.2 0.5 1
20 50 100  
0.2 0.5 1 2  
5 10 20 50 1
A)  
0.2 0.5 1 2  
5 10 20 50 100  
mA)  
COLLECTOR CT : I mA)  
C (  
COLLECTOR CURRENT : I  
C
(
COLLECTOR CURRENT : I  
C
(
Fig.5 DC current gain vs.  
ollector current (II)  
Fig.4 DC current gain vs.  
collector curr
Fig.6 Collector-emitter saturation  
voltage vs. collector current (I)  
10  
500  
1  
20  
Ta=25˚C  
CE= 12V  
lC/lB=
Ta=25˚C  
f=1MHz  
V
I
I
E
=
=
0A  
0A  
0.5  
C
10  
5
200  
100  
2  
0.1  
Ta=100˚C  
25˚C  
40˚C  
2
0.05  
50  
0.5  
1
2
5
10 20  
50 100  
0.2 0.5 1 2  
5 10 20 50 100  
mA)  
0.5 1  
2  
5  
10 20  
EMITTER CURRENT : I (mA)  
E
COLLECTOR CURRENT : I  
C
(
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.7 Collector-emitter saturation  
voltage vs. collector current (II)  
Fig.8 Gain bandwidth product vs.  
emitter current  
Fig.9 Collector output capacitance vs.  
collector-base voltage  
Emitter inputcapacitance vs.  
emitter-base voltage  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications fo
product described in this document are for reference only. Upon actual use, therefore, please reques
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples tandard  
use and operation. Please pay careful attention to the peripheral conditions when desicuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, deed erein  
are intended only as illustrations of such devices and not as the specificatior such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be infringement of any  
third party's intellectual property rights or other proprietary rights, anfurtassumes no liablty of  
whatsoever nature in the event of any such infringement, or arisfroor connected with oate
to the use of such devices.  
Upon the sale of any such devices, other than for buyeht to use such deviceself, esell or  
otherwise dispose of the same, no express or implied rt olicense to practor mmercially  
exploit any intellectual property rights or other prietary rights ownerolled by  
ROHM CO., LTD. is granted to any such buy.  
Products listed in this document are no antiradon design.  
The products listed in this document desed to be used wiinary electronic equipment or devices  
(such as audio visual equipment, officutomation equipmecommunications devices, electrical  
appliances and electronic toys
Should you intend to use these pts with equipmenes which require an extremely high level of  
reliability and the malfution with would directly endaer human life (such as medical instruments,  
transportation equipmeaospace machine, nuclear-reactor controllers, fuel controllers and other  
safety devices), e be sure to consult wiour ales representative in advance.  
About Control Order in Japan  
Produdescribed herein are tjects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in an.  
In case of export from Japalease confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
n the basis of "catcfor Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

相关型号:

SST6839_05

PNP general purpose transistor
ROHM

SST6908

TRANSISTOR | JFET | N-CHANNEL | 50UA I(DSS) | SOT-143
ETC

SST6909

TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | SOT-143
ETC

SST6910

TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | SOT-143
ETC

SST7

SQUARE CERAMIC SURFACE MOUNT SLOW BLOW FUSE
BEL

SST7157

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | SOT-23
ETC

SST7208

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | SOT-23
ETC

SST7208T117

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
ROHM

SST7208T216

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SST, 3 PIN
ROHM

SST750

Square Ceramic Surface Mount Slow Blow Fuse
BEL

SST75C

Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO
SUNTSU

SST75C33F07

Ceramic Stratum 3 SMT 10 Pad CMOS (VC)TCXO
SUNTSU