UM6K34N [ROHM]

0.9V Drive Nch + Nch MOSFET; 0.9V驱动N沟道+ N沟道MOSFET


型号：	UM6K34N
厂家：	ROHM
描述：	0.9V Drive Nch + Nch MOSFET 0.9V驱动N沟道+ N沟道MOSFET 驱动
文件：	总7页 (文件大小：1185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

0.9V Drive Nch + Nch MOSFET

UM6K34N

 Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT6

(SC-88)

<SOT-363>

(6) (5) (4)

Features

1) Mounting cost and area can be cut in half.

2) Low On-resistance.

(1) (2) (3)

3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment.

Abbreviated symbol : K34

 Application

Interfacing, Switching

Inner circuit

(6)

(5)

(4)

∗1

 Packaging specifications

Package

Taping

TCN

3000

○

∗2

Type

∗2

Code

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

Basic ordering unit (pieces)

∗1

UM6K34N

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Drain-source voltage

Gate-source voltage

8

Continuous

200

800

125

800

Drain current

Pulsed

I_DP

I_s

Continuous

Pulsed

Source current

(Body Diode)

I_sp

150

120

mW / TOTAL

P_D

Power dissipation

mW / ELEMENT

Channel temperature

Tch

150

C

Range of storage temperature

*1 Pw10s, Duty cycle1%

Tstg

55 to 150

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Symbol

Limits

833

Unit

˚C / W /TOTAL

˚C / W /ELEMENT

Channel to Ambient

Rth (ch-a)

1042

* Each terminal mounted on a recommended land.

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Data Sheet

UM6K34N

ꢀ

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

A V_GS=8V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=50V, V_GS=0V

Conditions

Gate-source leakage

10

Drain-source breakdown voltage V _(BR)DSS

Zero gate voltage drain current

Gate threshold voltage

I_DSS

V_{GS (th)}

0.3

0.8

2.2

2.4

2.8

3.3

9.0



V_DS=10V, I_D=1mA

1.6

1.7

2.0

2.2

3.0

I_D=200mA, V_GS=4.5V

I_D=200mA, V_GS=2.5V

I_D=200mA, V_GS=1.5V

I_D=100mA, V_GS=1.2V

I_D=10mA, V_GS=0.9V

I_D=200mA, V_DS=10V

Static drain-source on-state

resistance

R_{DS (on)}

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

0.2

C_iss

C_oss

C_rss

t_d(on)

t_r

pF V_DS=10V

pF V_GS=0V

pF f=1MHz

ns I_D=100mA, V_DD25V

ns V_GS=4.5V

ns R_L=250

ns R_G=10

Turn-off delay time

Fall time

t_d(off)

t_f

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.2

Conditions

V_SD

I_s=200mA, V_GS=0V

*Pulsed

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Data Sheet

UM6K34N

ꢀ

Electrical characteristic curves (Ta=25C)

Fig.2 Typical Output Characteristics(Ⅱ)

Fig.1 Typical Output Characteristics(Ⅰ)

0.2

0.15

0.1

V_GS= 4.5V

V_GS= 2.5V

V_GS= 1.5V

V_GS= 1.2V

0.15

V_GS= 0.9V

V_GS= 4.5V

V_GS= 2.5V

V_GS= 1.5V

V_GS= 0.9V

0.1

0.05

V_GS= 1.2V

V_GS= 0.8V

T_a=25°C

pulsed

V_GS= 0.8V

T_a=25°C

pulsed

0.05

V_GS= 0.7V

0.8

0.2

0.4

0.6

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.4 Static Drain-Source On-State

Fig.3 Typical Transfer Characteristics

Resistance vs. Drain Current(Ⅰ)

10000

1000

100

V_DS= 10V

Pulsed

T_a=25°C

pulsed

T_a=125°C

T_a=75°C

T_a=25°C

0.1

T_a= -25°C

V_GS= 0.9V

V_GS= 1.2V

V_GS= 1.5V

V_GS= 2.5V

V_GS= 4.5V

0.01

0.001

0.2

0.4

0.6

0.8

0.001

0.01

0.1

GATE-SOURCE VOLTAGE : V_GS[V]

DRAIN-CURRENT : I_D[A]

Fig.5 Static Drain-Source On-State

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

Resistance vs. Drain Current(Ⅲ)

10000

1000

100

10000

1000

100

V_GS= 4.5V

Pulsed

V_GS= 2.5V

Pulsed

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

0.001

0.01

0.1

0.001

0.01

0.1

DRAIN-CURRENT : I_D[A]

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Data Sheet

UM6K34N

ꢀ

Fig.7 Static Drain-Source On-State

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

Resistance vs. Drain Current(Ⅴ)

10000

1000

100

V_GS= 1.5V

Pulsed

V_GS= 1.2V

Pulsed

1000

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

100

0.001

0.01

0.1

0.001

0.01

0.1

DRAIN-CURRENT : I_D[A]

Fig.9 Static Drain-Source On-State

Fig.10 Forward Transfer Admittance

vs. Drain Current

Resistance vs. Drain Current(Ⅵ)

10000

V_GS= 0.9V

Pulsed

V_DS= 10V

Pulsed

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

1000

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

100

0.001

0.1

0.01

0.1

DRAIN-CURRENT : I_D[A]

Fig.12 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.11 Reverse Drain Current

vs. Sourse-Drain Voltage

5000

4000

3000

2000

1000

T_a=25°C

pulsed

V_GS=0V

Pulsed

I_D= 0.01A

I_D= 0.20A

0.1

T_a=125°C

T_a=75°C

T_a=25°C

T_a= -25°C

0.01

0.5

1.5

SOURCE-DRAIN VOLTAGE : V_SD[V]

GATE-SOURCE VOLTAGE : V_GS[V]

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Data Sheet

UM6K34N

ꢀ

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

Fig.13 Switching Characteristics

1000

100

T_a=25°C

t_d(off)

V_DD=25V

V_GS=4.5V

R_G=10Ω

Pulsed

t_f

T_a=25°C

V_DD=25V

I_D= 0.2A

R_G=10Ω

Pulsed

t_r

t_d(on)

0.01

0.1

0.5

1.5

DRAIN-CURRENT : I_D[A]

TOTAL GATE CHARGE : Qg [nC]

Fig.15 Typical Capacitance

vs. Drain-Source Voltage

1000

T_a=25°C

f=1MHz

V_GS=0V

C_iss

100

C_rss

C_oss

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : V_DS[V]

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Data Sheet

UM6K34N

ꢀ

 Measurement circuits

Pulse width

90%

VGS

VDS

50%

10%

50%

10%

90%

D.U.T.

90%

d(on)

td(off)

toff

Fig.1-2ꢀSwitching Waveforms

Fig.1-1 Switching Time Measurement Circuit

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design

ESD protection circuit.

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Notice

N o t e s

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1120A

UM6K34N [ROHM]

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