UMD9NTR [ROHM]
Digital Transistor (Dual Digital Transistors for Inverter Drive); 数字晶体管（双数字晶体管为逆变器驱动）
| 型号： | UMD9NTR |
| 厂家： | 
ROHM |
| 描述： | Digital Transistor (Dual Digital Transistors for Inverter Drive) |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Digital Transistor (Dual Digital Transistors for Inverter Drive)
EMD9 / UMD9N / IMD9A
Features
Dimensions (Unit : mm)
1) DTA114Y and DTC114Y transistors are built-in a EMT
or UMT or SMT package.
EMD9
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
Inner circuit
1.2
1.6
EMD9 / UMD9N
(3) (2) (1)
IMD9A
(4) (5) (6)
R1
R
2
R1
R2
Each lead has same dimensions
DTr1
DTr1
DTr2
DTr2
ROHM : EMT6
UMD9N
R2
R2
R1
R1
Abbreviated symbol : D9
R
=10k
Ω
R
R
=10k
2
1=47k
Ω
R
2
1=47k
Ω
Ω
(4) (5) (6)
(3) (2) (1)
Package, marking, and packaging specifications
1.25
2.1
Type
Package
EMD9
EMT6
D9
UMD9N
UMT6
D9
IMD9A
SMT6
D9
Marking
Code
Basic ordering unit (pieces)
T2R
TR
T108
3000
8000
3000
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Absolute maximum ratings (Ta=25C)
Parameter
Supply voltage
Symbol
Limits
50
Unit
V
Abbreviated symbol : D9
V
CC
IN
V
−6 to +40
70
V
Input voltage
IMD9A
I
O
mA
mA
mW
mW
°C
Output current
Collector current
I
C (Max.)
100
∗
∗
1
2
EMD9, UMD9N
IMD9A
150(TOTAL)
300(TOTAL)
Power dissipation
Pd
Tj
Junction temperature
Storage temperature
150
Tstg
−55 to +150
°C
1.6
2.8
1
2
120mW per element must not be exceeded. PNP type negative symbols have been omitted.
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
∗
∗
0.3to0.6
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D9
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
V
I(off)
I(on)
−
1.4
−
−
−
0.1
−
−
−
0.3
−
0.3
0.88
0.5
−
V
CC=5V , I
=0.3V , I
=5mA , I =0.25mA
=5V
CC=50V , V
=5mA , V =5V
O
=100μA
Input voltage
V
VO
O=1mA
Output voltage
VO(on)
V
mA
mA
−
I
O
I
I
I
−
−
V
I
Input current
Output current
I
O(off)
V
I=0V
G
I
68
−
I
O
O
DC current gain
Transition frequency
Input resistance
∗
f
T
250
−
MHz
VCE=10V , I
E
= −5mA , f=100MHz
R1
7
10
13
kW
−
−
Resistance ratio
R2/R1
3.7
4.7
5.7
−
PNP type negative symbols have been omitted.
Characteristics of built-in transistor.
∗
www.rohm.com
2010.01 - Rev.D
1/3
c
○ 2010 ROHM Co., Ltd. All rights reserved.
EMD9 / UMD9N / IMD9A
Data Sheet
Electrical characteristics curves DTr1 (DTC114Y)
−10m
−5m
−100
−50
1k
V
O=−0.3V
V
CC=−5V
VO=−5V
500
Ta=100°C
25°C
−40°C
−2m
200
100
50
−20
−10
−5
−1m
−500μ
Ta=100°C
25°C
−40°C
−200μ
Ta=−40°C
25°C
100°C
−100μ
−50μ
20
10
−2
−1
−20μ
−10μ
−5μ
−500m
5
−200m
−100m
2
1
−2μ
−1μ
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
−1
lO/lI=20
−500m
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
www.rohm.com
2010.01 - Rev.D
2/3
c
○ 2010 ROHM Co., Ltd. All rights reserved.
EMD9 / UMD9N / IMD9A
Data Sheet
Electrical characteristics curves DTr2 (DTA114Y)
10m
5m
100
50
1k
VO
=0.3V
V
CC=5V
VO=5V
500
2m
Ta=100°C
20
10
200
100
50
25°C
1m
−40°C
500μ
Ta=100°C
25°C
−40°C
200μ
Ta=−40°C
25°C
100°C
5
2
100μ
50μ
20
1
10
5
20μ
10μ
5μ
500m
200m
100m
2
1
2μ
1μ
100μ 200μ
500μ 1m
2m
5m 10m 20m 50m 100m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
200m
100m
Ta=100°C
25°C
−40°C
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
www.rohm.com
2010.01 - Rev.D
3/3
c
○ 2010 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R1010
A
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