UMF28NTR [ROHM]
暂无描述;UMF28N
Transistors
Power management (dual transistors)
UMF28N
2SA1774 and DTC124XE are housed independently in a UMT package.
zApplication
zExternal dimensions (Unit : mm)
Power management circuit
UMF28N
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
1.25
2.1
0.1Min.
zStructure
Silicon epitaxial planar transistor
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : F28
zEquivalent circuit
(3)
(2) (1)
DTr2
Tr1
R1
R2
(4)
(5)
(6)
R1=22kΩ
R2=47kΩ
zPackaging specifications
Type
Package
Marking
Code
UMF28N
UMT6
F28
TR
Basic ordering unit (pieces) 3000
1/4
UMF28N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Limits
−60
Parameter
Symbol
Unit
V
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
−50
V
−6
V
I
C
−150
mA
mW
°C
∗
PC
Collector power dissipation
Junction temperature
150 (TOTAL)
150
Tj
Tstg
−55 to +150
°C
Storage temperature
∗ 120mW per element must not be exceeded.
DTr2
Parameter
Supply voltage
Symbol
Limits
50
Unit
V
VCC
Input voltage
V
IN
−10 to +40
100
V
I
O
Output current
mA
I
C(Max.)
100
∗
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
150(TOTAL)
150
−55 to +150
mW
°C
°C
∗ 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min.
Typ.
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
−60
−50
−6
−
−
−
I
I
I
C
C
E
= −50µA
= −1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
V
−
−
V
= −50µA
CB = −60V
EB = −6V
I
CBO
EBO
CE(sat)
FE
−
−0.1
−0.1
−0.5
390
−
µA
µA
V
V
V
I
−
−
Emitter cutoff current
V
−
−
I
C/I
B
= −50mA/−5mA
= −1mA
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
h
180
−
−
−
V
V
V
CE = −6V, I
C
f
T
140
4
MHz
pF
CE = −12V, I
CB = −12V, I
E
= 2mA, f = 100MHz
= 0A, f = 1MHz
Cob
−
5
E
Output capacitance
DTr2
Parameter
Symbol
Min.
−
2.5
−
−
−
Typ.
−
−
0.1
−
−
Max.
Unit
Conditions
V
I(off)
0.4
−
0.3
0.36
0.5
−
V
CC=5V, I
=0.3V, I
=10mA, I
=5V
CC=50V, V
=5V, I =5mA
O
=100µA
Input voltage
V
V
I(on)
VO
O
=2mA
Output voltage
Input current
V
O(on)
V
mA
µA
−
I
O
I
=0.5mA
I
I
V
V
V
I
Output current
DC current gain
I
O(off)
I
=0V
G
I
68
−
O
O
Input resistance
R
1
15.4
1.7
−
22
2.1
250
28.6
2.6
−
kΩ
−
MHz
−
−
Resistance ratio
R
2/R
1
∗
Transition frequency
∗ Transition frequency of the device.
f
T
VCE=10V, I
E
= −5mA, f=100MHz
2/4
UMF28N
Transistors
zElectrical characteristics curves
Tr1
-35.0
-10
-8
-100
-80
-50
V
CE = −6V
Ta = 25°C
Ta = 25°C
Ta = 100°C
25°C
-31.5
-28.0
-24.5
-21.0
-17.5
-14.0
-10.5
-7.0
-20
-10
-500
-450
-400
-350
-300
−40°C
-5
-250
-200
-6
-4
-2
-60
-40
-20
-2
-1
-150
-100
-0.5
-50µA
-3.5µA
-0.2
-0.1
I
B
= 0
-2.0
IB = 0
0
-0.4
-0.8
-1.2
-1.6
0
-1
-2
-3
-4
-5
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
500
500
-1
V
CE = -5V
-3V
Ta = 25°C
Ta = 25°C
Ta = 100°C
25°C
-1V
-0.5
-0.2
-40°C
200
100
50
200
100
I
C/I
B
= 50
-0.1
20
10
50
-0.05
V
CE = -6V
-0.2 -0.5 -1 -2
-5 -10 -20
-50 -100
-0.2
-0.5 -1
-2
-5 -10 -20
-50 -100
-0.2 -0.5 -1 -2
COLLECTOR CURRENT :
-5 -10 -20 -50 -100
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT :
IC (mA)
IC (mA)
Fig.4 DC current gain vs. collector
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
Fig.5 DC current gain vs. collector
current ( Ι )
current ( ΙΙ )
1000
-1
20
10
Ta = 25°C
CE = -12V
lC/lB = 10
Ta = 25°C
V
f
I
I
= 1MHz
E
= 0A
= 0A
500
-0.5
C
200
100
-0.2
-0.1
5
2
Ta = 100°C
25°C
-40°C
-0.05
50
0.5
1
2
5
10
20
50 100
-0.5
-1
-2
-5
-10
-20
-0.2 -0.5 -1
-2
-5 -10 -20
-50 -100
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Emitter input capacitance vs.
emitter-base voltage
3/4
UMF28N
Transistors
DTr2
10m
5m
1k
100
V
O
=0.3V
V
CC=5V
V
O
=5V
50
500
Ta=100°C
25°C
−40°C
2m
20
10
200
100
1m
500µ
Ta=100°C
25°C
−40°C
Ta=−40°C
25°C
100°C
200µ
5
2
50
100µ
50µ
20
10
5
1
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : I (A)
O
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO
/lI
=20
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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