UMF32N [ROHM]

Power management (dual transistors); 电源管理（双晶体管）


型号：	UMF32N
厂家：	ROHM
描述：	Power management (dual transistors) 电源管理（双晶体管）晶体晶体管
文件：	总5页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EMF32 / UMF32N

Transistors

Power management (dual transistors)

EMF32 / UMF32N

DTA143T and 2SK3019 are housed independently in a EMT6 package.

zExternal dimensions (Unit : mm)

zApplication

Power management circuit

( )

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

1.2

1.6

zStructure

Silicon epitaxial planar transistor

ROHM : EMT6

Each lead has

same dimensions

Abbreviated symbol : F32

zEquivalent circuits

(3)

(2) (1)

Tr1

Tr2

1.25

1pin mark

2.1

(4)

(5)

(6)

0.1Min.

Each lead has

zPackaging specifications

ROHM : UMT6

same dimensions

Type

Package

EMF32

EMT6

F32

UMF32

UMT6

F32

Abbreviated symbol : F32

Marking

T2R

Code

8000

3000

Basic ordering unit (pieces)

1/4

EMF32 / UMF32N

Transistors

zAbsolute maximum ratings (Ta=25°C)

Tr1

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−50

−5

−100

Unit

VCBO

VCEO

VEBO

°C

∗1

Power dissipation

Junction temperature

Range of storage temperature

150(TOTAL)

150

−55 to +150

Tstg

∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Tr2

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

DSS

GSS

Continuous

100

200

100

200

°C

Drain current

∗1

Pulsed

Continuous

Pulsed

DRP

Reverse drain

current

∗1

∗2

Total power dissipation

Channel temperature

Tch

150(TOTAL)

150

Range of storage temperature

∗1 PW≤10ms Duty cycle≤50%

Tstg

−55 to +150

°C

∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

Tr1

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−50

−5

−

−50µA

−1mA

−50µA

−

CBO

EBO

CE(sat)

−

−0.5

−0.3

600

6.11

−

µA

−50V

−4V

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

C/I

= −5mA/ −0.25mA

100

3.29

−

250

4.7

250

−

−1mA, VCE

−5V

kΩ

MHz

−

Input resistance

−

10V, I

=5mA, f=100MHz

∗

Transition frequency

∗ Transition frequency of the device

Tr2

Parameter

Symbol

Min.

Typ.

Max.

Unit

µA

Conditions

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-threshold voltage

GSS

(BR)DSS

DSS

−

0.8

−

VGS= 20V, VDS=0V

=10µA, VGS=0V

DS=30V, VGS=0V

DS=3V, I =100µA

=10mA, VGS=4V

=1mA, VGS=2.5V

−

1.0

1.5

µA

GS(th)

Ω

Static drain-source

on-state resistance

RDS(on)

−

|Y^fs

Forward transfer admittance

Input capacitance

Output capacitance

Reverce transfer capacitance

Turn-on delay time

Rise time

−

DS=3V, I

=10mA

iss

oss

rss

d(on)

DS=5V, VGS=0V, f=1MHz

=10mA, VDD 5V,

GS=5V, R =500Ω,

GS=10Ω

Turn-off delay time

Fall time

−

d(off)

2/4

EMF32 / UMF32N

Transistors

zElectrical characteristic curves

Tr1

−1

l_C/l_B=20

VCE=−5V

−500m

500

Ta=100°C

25°C

−40°C

−200m

−100m

−50m

200

100

Ta=100°C

25°C

−40°C

−20m

−10m

−5m

−2m

−1m

−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m

−100µ −200µ −500µ −1m −2m

−5m −10m −20m −50m −100m

COLLECTOR CURRENT : I_C(A)

COLLECTOR CURRENT : I (A)

Fig.2 Collector-emitter saturation

voltage vs. collector current

Fig.1 DC current gain vs. collector

current

Tr2

0.15

200m

100m

1.5

DS=3V

=0.1mA

Pulsed

Ta=25°C

Pulsed

50m

3.5V

20m

10m

0.1

0.05

2.5V

Ta=125°C

75°C

25°C

−25°C

0.5

0.5m

0.2m

0.1m

GS=1.5V

−50 −25

75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

DRAIN-SOURCE VOLTAGE : VDS (V)

GATE-SOURCE VOLTAGE : VGS (V)

Fig.3 Typical output characteristics

Fig.5 Gate threshold voltage vs.

channel temperature

Fig.4 Typical transfer characteristics

GS=4V

GS=2.5V

Ta=25°C

Pulsed

Ta=125°C

75°C

Ta=125°C

25°C

75°C

25°C

−25°C

D=0.1A

D=0.05A

0.5

0.001 0.002

0.5

0.001 0.002

0.005 0.01 0.02

0.05 0.1

0.2

0.5

0.005 0.01 0.02

0.05 0.1

0.2

0.5

DRAIN CURRENT : ID (A)

GATE-SOURCE VOLTAGE : VGS (V)

DRAIN CURRENT : ID (A)

Fig.7 Static drain-source on-state

resistance vs. drain current ( ΙΙ )

Fig.8 Static drain-source on-state

resistance vs. gate-source

voltage

Fig.6 Static drain-source on-state

resistance vs. drain current ( Ι )

3/4

EMF32 / UMF32N

Transistors

0.5

0.2

200m

GS=4V

DS=3V

GS=0V

Pulsed

100m

50m

Ta=−25°C

25°C

=100mA

0.1

20m

75°C

Ta=125°C

0.05

125°C

10m

ID=50mA

75°C

25°C

−25°C

0.02

0.01

0.005

0.5m

0.002

0.001

0.2m

0.1m

0.0001 0.0002

0.0005 0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

−50 −25

75 100 125 150

0.5

1.5

DRAIN CURRENT : ID (A)

CHANNEL TEMPERATURE : Tch (°C)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Forward transfer admittance vs.

drain current

Fig.9 Static drain-source on-state

resistance vs. channel temperature

Fig.11 Reverse drain current vs.

source-drain voltage ( Ι )

1000

500

200m

Ta=25°C

Pulsed

DD=5V

GS=5V

f=1MH

100m

50m

GS=0V

td(off)

RG=10Ω

Pulsed

200

100

20m

10m

Ciss

GS=4V

Coss

d(on)

Crss

0.5m

0.2m

0.1m

0.5

0.1 0.2

0.5

10 20 50

100

0.5

1.5

DRAIN CURRENT : ID (mA)

DRAIN-SOURCE VOLTAGE : VDS (V)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.14 Switching characteristics

Fig.13 Typical capacitance vs.

drain-source voltage

Fig.12 Reverse drain current vs.

source-drain voltage ( ΙΙ )

4/4

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

相关型号：

UMF32NTR

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT6, 6 PIN