UMH33NTR

更新时间:2024-09-18 14:19:02
品牌:ROHM
描述:Small Signal Bipolar Transistor, 0.4A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, UMT6, SC-88, 6 PIN

UMH33NTR 概述

Small Signal Bipolar Transistor, 0.4A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, UMT6, SC-88, 6 PIN 小信号双极晶体管

UMH33NTR 规格参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
最大集电极电流 (IC):0.4 A集电极-发射极最大电压:20 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):820
JESD-30 代码:R-PDSO-G6湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):35 MHz
Base Number Matches:1

UMH33NTR 数据手册

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UMH33N  
Datasheet  
NPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting.  
lOutline  
UMT6  
Parameter  
Tr1 and Tr2  
20V  
(6)  
(5)  
VCEO  
VEBO  
IC  
(4)  
(1)  
(2)  
40V  
(3)  
400mA  
2.2kW  
UMH33N  
SOT-353 (SC-88)  
R1  
lFeatures  
1) Built-In Biasing Resistors  
2) Two DTC923TUB chips in one package.  
3) High Breakdown Voltage of Emitter to Base  
BVEBO is Min. 40V at IE=50mA  
4) Low Output ON Resistance.  
Ron is Typ. 0.6W at VI=5V  
5) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
lInner circuit  
Collector Base  
(6) (5)  
Emitter  
(4)  
6) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
completely eliminating parasitic effects.  
7) Lead Free/RoHS Compliant.  
(1)  
Emitter  
(2)  
(3)  
Base Collector  
lApplication  
Muting circuit  
lPackaging specifications  
Package  
size  
(mm)  
Basic  
ordering  
unit (pcs)  
Taping  
code  
Reel size Tape width  
Part No.  
UMH33N  
Package  
UMT6  
Marking  
H33  
(mm)  
(mm)  
2021  
TR  
180  
8
3,000  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.02 - Rev.A  
1/5  
Data Sheet  
UMH33N  
lAbsolute maximum ratings (Ta = 25°C)  
<For Tr1 and Tr2 in common>  
Parameter  
Symbol  
VCBO  
Values  
40  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCEO  
20  
V
VEBO  
40  
V
IC  
400  
mA  
mW  
°C  
°C  
*1  
150 (Total)*2  
150  
Power dissipation  
PD  
Tj  
Junction temperature  
Range of storage temperature  
Tstg  
-55 to +150  
lElectrical characteristics (Ta = 25°C)  
<For Tr1 and Tr2 in common>  
Parameter  
Symbol  
BVCBO  
BVCEO IC= 1mA  
Conditions  
Min.  
40  
20  
40  
-
Typ.  
Max.  
Unit  
V
IC= 50mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-
-
-
-
V
BVEBO  
ICBO  
IE= 50mA  
VCB = 40V  
VEB = 40V  
-
-
V
-
500  
500  
100  
2700  
2.86  
nA  
nA  
mV  
-
IEBO  
Emitter cut-off current  
-
-
VCE(sat) IC / IB= 30mA / 3mA  
Collector-emitter saturation voltage  
DC current gain  
-
30  
-
hFE  
R1  
VCE= 5V, IC= 10mA  
-
820  
1.54  
Input resistance  
2.2  
kW  
VCE = 6V, IE = -4mA,  
f = 10MHz  
*3  
Transition frequency  
-
-
35  
-
-
MHz  
fT  
VI = 5V,  
Ron  
Output ON Resistance  
0.6  
W
RL = 1kW, f = 1kHz  
*1 Each terminal mounted on a reference footprint  
*2 120mW per element must not be exceeded.  
*3 Characteristics of built-in transistor  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.02 - Rev.A  
2/5  
Data Sheet  
UMH33N  
lElectrical characteristic curves(Ta = 25°C)  
Fig.2 Grounded emitter output characteristics  
Fig.1 Grounded emitter propagation  
characteristics  
1.6mA  
IB= 2.0mA 1.8mA  
1.4mA  
10  
300  
250  
200  
150  
100  
50  
1.2mA  
1.0mA  
0.8mA  
VCE= 5V  
1
0.6mA  
0.4mA  
0.1  
0.01  
Ta= 125ºC  
75ºC  
0.2mA  
25ºC  
-40ºC  
Ta= 25ºC  
8 10  
0mA  
0
0.001  
0
2
4
6
0
0.5  
1
1.5  
2
BASE TO EMITTER VOLTAGE : VBE [V]  
COLLECTOR TO EMITTER VOLTAGE : VCE [V]  
Fig.4 Collector-emitter saturation voltage  
vs. Collector Current  
Fig.3 DC Current gain  
vs. Collector Current  
10000  
1
VCE= 5V  
IC/IB=10  
1000  
100  
10  
0.1  
0.01  
Ta= 125ºC  
75ºC  
25ºC  
-40ºC  
Ta= 125ºC  
75ºC  
25ºC  
-40ºC  
0.001  
1
10  
100  
1000  
1
10  
100  
1000  
COLLECTOR CURRENT : IC [mA]  
COLLECTOR CURRENT : IC [mA]  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.02 - Rev.A  
3/5  
Data Sheet  
UMH33N  
lElectrical characteristic curves(Ta = 25°C)  
Fig.5 Output ON resistance  
vs. input voltage  
100  
Ta=25ºC  
f=1kHz  
RL=1kW  
hFE=1100  
(VCE=5V, IC=10mA)  
10  
1
0.1  
0.1  
1
10  
100  
INPUT VOLTAGE : VI [V]  
Fig.6 Ron measurement circuit.  
Vo  
Ron=  
×RL  
RL=1kΩ  
Vi-VO  
D.U.T.  
INPUT  
OUTPUT  
VO  
V
Vi  
~
~
100mV(rms)  
VI  
f=1kHz  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.02 - Rev.A  
4/5  
Data Sheet  
UMH33N  
lDimensions (Unit : mm)  
D
A
c
e
UMT6  
Q
A3  
b
x
S A  
e
y
S
S
b2  
Pattern of terminal position areas  
[Not a recommended pattern of soldering pads]  
MILIMETERS  
INCHES  
DIM  
MIN  
0.80  
0.00  
MAX  
1.00  
0.10  
MIN  
0.031  
0.000  
MAX  
0.039  
0.004  
A
A1  
A3  
b
c
D
0.25  
0.65  
0.010  
0.026  
0.15  
0.10  
1.90  
1.15  
0.30  
0.20  
2.10  
1.35  
0.006  
0.004  
0.075  
0.045  
0.012  
0.008  
0.083  
0.053  
E
e
HE  
L1  
Lp  
Q
x
2.00  
0.20  
0.25  
0.10  
-
2.20  
0.50  
0.55  
0.30  
0.10  
0.10  
0.079  
0.008  
0.010  
0.004  
-
0.087  
0.020  
0.022  
0.012  
0.004  
0.004  
y
-
-
MILIMETERS  
INCHES  
0.061  
DIM  
MIN  
-
MAX  
0.40  
MIN  
-
MAX  
0.016  
b2  
e1  
l1  
1.55  
-
0.65  
-
0.026  
Dimension in mm / inches  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.02 - Rev.A  
5/5  
Notice  
N o t e s  
1) The information contained herein is subject to change without notice.  
2) Before you use our Products, please contact our sales representative and verify the latest specifica-  
tions :  
3) Although ROHM is continuously working to improve product reliability and quality, semicon-  
ductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury or fire arising from failure, please take safety  
measures such as complying with the derating characteristics, implementing redundant and  
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no  
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by  
ROHM.  
4) Examples of application circuits, circuit constants and any other information contained herein are  
provided only to illustrate the standard usage and operations of the Products. The peripheral  
conditions must be taken into account when designing circuits for mass production.  
5) The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,  
any license to use or exercise intellectual property or other rights held by ROHM or any other  
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of  
such technical information.  
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-  
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in  
this document.  
7) The Products specified in this document are not designed to be radiation tolerant.  
8) For use of our Products in applications requiring a high degree of reliability (as exemplified  
below), please contact and consult with a ROHM representative : transportation equipment (i.e.  
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety  
equipment, medical systems, servers, solar cells, and power transmission systems.  
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace  
equipment, nuclear power control systems, and submarine repeaters.  
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with  
the recommended usage conditions and specifications contained herein.  
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this  
document. However, ROHM does not warrants that such information is error-free, and ROHM  
shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
12) Please use the Products in accordance with any applicable environmental laws and regulations,  
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a  
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
13) When providing our Products and technologies contained in this document to other countries,  
you must abide by the procedures and provisions stipulated in all applicable export laws and  
regulations, including without limitation the US Export Administration Regulations and the Foreign  
Exchange and Foreign Trade Act.  
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of  
ROHM.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
R1102  
A

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