UMH8N [ROHM]

General purpose (dual digital transistors); 通用(双数字晶体管)
UMH8N
型号: UMH8N
厂家: ROHM    ROHM
描述:

General purpose (dual digital transistors)
通用(双数字晶体管)

晶体 小信号双极晶体管 数字晶体管
文件: 总3页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UMH8N / IMH8A  
Transistors  
General purpose (dual digital transistors)  
UMH8N / IMH8A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTC114T chips in a EMT or UMT or SMT  
package.  
UMH8N  
1.25  
2.1  
zEquivalent circuits  
UMH8N  
IMH8A  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
0.1Min.  
R1  
R1  
ROHM : UMT6  
EIAJ : SC-88  
Each lead has same dimensions  
R1  
R1  
(4) (5)  
(6)  
(3) (2)  
(1)  
R1=10kΩ  
R1=10kΩ  
IMH8A  
zPackage, marking, and packaging specifications  
UMH8N  
UMT6  
H8  
IMH8A  
SMT6  
H8  
1.6  
2.8  
Type  
Package  
Marking  
Code  
TR  
T108  
3000  
0.3Min.  
Basic ordering unit (pieces)  
3000  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
50  
50  
V
5
V
I
C
100  
mA  
1  
2  
UMH8N  
IMH8A  
150(TOTAL)  
300(TOTAL)  
150  
Pd  
mW  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
zElectrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
Typ.  
Max.  
Conditions  
Unit  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5
V
V
I
I
I
C
=50µA  
=1mA  
C
V
E
=50µA  
CB=50V  
EB=4V  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
0.5  
0.3  
600  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
100  
I
C
/I  
CE=5V, I  
CE=10V, I  
B
=10mA/1mA  
h
250  
250  
10  
MHz  
V
V
C
=1mA  
= −5mA, f=100MHz  
Transition frequency  
f
T
E
Input resistance  
R1  
7
13  
kΩ  
Transition frequency of the device.  
Rev.A  
1/2  
UMH8N / IMH8A  
Transistors  
zElectrical characteristics curves  
1k  
1
V
CE=  
5V  
lC/lB=10  
500  
500m  
200m  
100m  
50m  
200  
100  
50  
Ta=100°C  
25°C  
40°C  
Ta=100°C  
25°C  
40°C  
20  
20m  
10  
5
10m  
5m  
2
1
2m  
1m  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m  
50m 100m  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m  
50m 100m  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
Fig.1 DC current gain vs. collector  
current  
Fig.2 Collector-emitter saturation  
voltage vs. collector current  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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车载数字晶体管与通用品共用数据表。下订单时,请注意下列型号命名方式,编写为车载型号。
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