UML6N_1 [ROHM]
General purpose transistor (isolated transistor and diode); 通用晶体管（隔离的晶体管和二极管）
| 型号： | UML6N_1 |
| 厂家： | 
ROHM |
| 描述： | General purpose transistor (isolated transistor and diode) |
| 文件： | 总5页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EML6 / UML6N
Transistors
General purpose transistor
(isolated transistor and diode)
EML6 / UML6N
2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zDimensions (Unit : mm)
zApplications
DC / DC converter
Motor driver
EMT5
1.6
0.5
1.0
0.5 0.5
zFeatures
( ) (
)
5
4
1) Tr : Low VCE(sat)
Di : Low VF
( )
( )
( )
1
2
3
2) Small package
0.22
0.13
Each lead has same dimensions
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
Abbreviated symbol : L6
ROHM : EMT5
UMT5
The following characteristics apply to both Di1 and Tr2.
2.0
1.3
0.9
0.7
0.65 0.65
zEquivalent circuit (EML6 / UML6N)
( )
(
5
4
)
(5)
(4)
( )
( )
( )
1
2
3
1pin mark
0.15
0.2
Di1
Tr2
Each lead has same dimensions
Abbreviated symbol : L6
(1)
(2) (3)
ROHM : UMT5
EIAJ : SC-88A
zPackaging specifications
Type
Package
Marking
Code
EML6
EMT5
L6
UML6N
UMT5
L6
T2R
TR
Basic ordering unit (pieces) 8000
3000
Rev.C
1/4
EML6 / UML6N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol
Limits
200
1
Unit
mA
A
Average revtified forward current
Forward current surge peak (60Hz, 1∞)
Reverse voltage (DC)
IO
I
FSM
V
R
30
V
Junction temperature
Tj
125
°C
Tr2
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
15
12
6
V
V
V
I
C
500
1
mA
A
Collector current
I
CP
∗1
Power dissipation
Junction temperature
P
Tj
d
120
150
mW
°C
∗1 Each terminal mounted on a recommended.
Di1 / Tr2
Parameter
Power dissipation
Storage temperature
Symbol
Limits
150
−55 to +125
Unit
mW
°C
∗
P
d
Tstg
∗ Each terminal mounted on a recommended.
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Min.
Typ.
0.40
4.0
Max.
0.50
30
Unit
V
Conditions
Forward voltage
Reverse current
VF
−
−
I
F
=200mA
I
R
µA
VR=10V
Tr2
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
12
15
6
−
−
−
−
−
90
−
320
7.5
−
−
−
100
100
250
680
−
V
V
I
I
I
C
=1mA
C=10µA
V
E
=10µA
CB=15V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
−
270
−
nA
nA
mV
−
MHz
pF
V
V
I
V
I
C
=200mA, I
B
=10mA
=10mA
=−10mA, f=100MHz
h
V
V
V
CE=2V, I
CE=2V, I
CB=10V, I
C
Transition frequency
f
T
E
E=0mA, f=1MHz
Collector output capacitance
Cob
−
−
Rev.C
2/4
EML6 / UML6N
Transistors
zElectrical characteristic curves
Di1
100
10
1
100000
10000
1000
100
1000
Ta=125℃
f=1MHz
Ta=125℃
100
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=75℃
10
1
10
Ta=-25℃
0.1
1
Ta=25℃
0.1
0.01
0.01
0.001
0
10
20
30
0
100
200
300
400
500
0
5
10
15
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Tr2
1000
1000
1000
V
CE=2V
V
CE=2V
Ta=25°C
Pulsed
Ta=125°C
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
100
10
1
100
10
C
°
C
C
°
°
IC/IB=50
40
−
Ta=125
Ta=25
IC/IB=20
Ta=
IC/IB=10
11
10
100
1000
1 1
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current
Fig.5 Collector-emitter saturation voltage
Fig.3 Grounded emitter propagation
characteristics
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
I
C B=20
/I
Pulsed
Ta=25°C
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
100
10
100
10
Ta=
1
25°C
Ta=125°C
25°C
−40°C
11
10
100
1000
10 1
10
100
1000
11
10
100
1000
EMITTER CURRENT : I
E
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Gain bandwidth product
vs. emitter current
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
Rev.C
2/4
EML6 / UML6N
Transistors
1000
100
10
10
1
I
f
E
=
0A
Ta=25°C
=
1MHz
Single Pulsed
Ta=25°C
1ms
10ms
100ms
DC
Cib
0.1
0.01
Cob
1
0.1
0.0001.01
0.1
1
10
100
1
10
100
EMITTER CURRENT : VCE (V)
EMITTER TO BASE VOLTAGE : VEB V)
(
Fig.9 Collector output capacitance
vs. collector-base voltage
Fig.10 Safe operation area
Emitter input capacitance
vs. emitter-base voltage
Rev.C
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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