UMX1NTL [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon;
| 型号： | UMX1NTL |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon 晶体 小信号双极晶体管 光电二极管 |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMX1 / UMX1N / IMX1
Transistors
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
!Features
!External dimensions (Units : mm)
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
EMX1
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
1.2
1.6
Each lead has same dimensions
ROHM
: EMT6
4) Mounting cost and area can be cut in half.
Abbreviated symbol : X1
UMX1N
!Structure
Epitaxial planar type
NPN silicon transistor
1.25
2.1
0.1Min.
!Equivalent circuit
Each lead has same dimensions
ROHM
EIAJ
:
UMT6
:
SC-88
EMX1 / UMX1N
IMX1
(3) (2) (1)
(4) (5) (6)
Abbreviated symbol : X1
IMX1
Tr1
Tr1
Tr2
Tr2
(4) (5) (6)
(3) (2) (1)
1.6
2.8
0.3to0.6
The following characteristics apply to both Tr1 and Tr2.
Each lead has same dimensions
ROHM
EIAJ
:
SMT6
:
SC-74
!Absolute maximum ratings (Ta = 25°C)
Abbreviated symbol : X1
Limits
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Unit
V
V
V
V
CBO
CEO
EBO
60
50
V
7
V
I
C
150
mA
1
∗
2
∗
EMX1, UMX1N
Power
150 (TOTAL)
300 (TOTAL)
150
P
C
mW
dissipation
IMX1
Junction temperature
Storage temperature
Tj
˚C
˚C
Tstg
−55∼+150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
∗
∗
1/3
EMX1 / UMX1N / IMX1
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
60
50
7
−
−
−
−
−
V
V
V
I
I
I
C
=
=
50µA
1mA
Collector-emitter breakdown voltage BVCEO
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
−
E
=
50µA
I
CBO
EBO
CE (sat)
FE
−
−
0.1 µA
0.1 µA
V
CB
=60V
Emitter cutoff current
I
−
−
V
EB=7V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
−
−
0.4
560
−
V
−
I
C/I =50mA/5mA
B
h
120
−
−
V
CE
=
6V, I
C
=
1mA
180
2
MHz
f
T
V
CE
CB
=
=
12V, I
E
E
=−2mA, f=100MHz
∗
V
12V, I
=
0A, f
=
1MHz
Output capacitance
Cob
−
3.5 PF
!Packaging specifications
Package
Taping
TN
Code
T2R
T110
3000
Basic ordering
unit (pieces)
8000
3000
Type
EMX1
UMX1N
IMX1
!Electrical characteristic curves
0.50mA
50
10
8
100
30µA
27µA
24µA
21µA
Ta=25˚C
Ta=25˚C
VCE=6V
0.40mA
0.35mA
20
10
5
80
60
40
0.30mA
0.25mA
0.20mA
0.15mA
6
18µA
15µA
12µA
9µA
C
˚
2
1
4
Ta=100
0.10mA
0.05mA
0.5
6µA
2
0
20
0
3µA
0.2
0.1
I
B=0A
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
2/3
EMX1 / UMX1N / IMX1
Transistors
500
500
Ta=25˚C
0.5
VCE=5V
Ta=25˚C
Ta=100˚C
25˚C
V
CE=5V
3V
1V
200
100
50
200
100
50
0.2
0.1
−55˚C
I
C/I
B
=50
0.05
20
10
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20
50 100 200
0.2 0.5
1
2
5
10 20
50 100 200
0.2 0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.5 DC current gain vs. collector
current ( II )
Fig.4 DC current gain vs. collector
current ( I )
0.5
0.5
0.2
0.5
I
C/I
B
=50
IC/IB=10
Ta=25˚C
Ta=100˚C
25˚C
−55˚C
0.2
0.2
0.1
I
C/I
B
=50
20
10
Ta=100˚C
25˚C
−55˚C
0.1
0.1
0.05
0.05
0.05
0.02
0.01
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100
0.2 0.5
1
2
5
10 20
50 100 200
(mA)
0.2 0.5
1
2
5
10 20
50 100 200
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
20
Ta=25˚C
Ta=25˚C
Ta=25˚C
f=32MH
Z
V
CE=6V
200
100
50
500
200
f
=
1MHz
V
CB=6V
IE=0A
10
5
IC=0A
100
50
2
1
20
10
−0.5 −1
−2
−5 −10 −20
−50 −100
−0.2
−0.5
−1
−2
−5
−10
0.2
0.5
1
2
5
10
20
50
EMITTER CURRENT : I
E
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.12 Base-collector time constant vs.
emitter current
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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