US6T5 [ROHM]

Low frequency amplifier (-30V, -2A); 低频放大器（ -30V ， -2A ）


型号：	US6T5
厂家：	ROHM
描述：	Low frequency amplifier (-30V, -2A) 低频放大器（ -30V ， -2A ）放大器
文件：	总3页 (文件大小：76K)
中文：	中文翻译
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US6T5

Transistors

Low frequency amplifier (-30V, -2A)

US6T5

zDimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

zFeatures

1) A collector current is large.

2) V_CE(sat): max. −370mV

At lc= −1.5A / l_B= −75mA

ROHM : TUMT6

Abbreviated symbol : T05

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−30

−6

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

−2

−4

400

1.0

°C

Collector current

Power dissipation

∗1

∗2

∗3

(1)

(2)

(3)

Junction temperature

Range of storage temperature

∗1 Single pulse, Pw=1ms

Tstg

150

−55 to +150

∗2 Each terminal mounted on a recommended

∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substrate.

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BVCBO

BVCEO

BV^EBO

Min.

−30

−6

−

270

−

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff curent

= −10µA

= −1mA

−

= −10µA

CB= −30V

EB= −6V

CBO

EBO

CE(sat)

−100

−370

680

−

MHz

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current gain

−180

−

280

= −1.5A, I

CE= −2V, I

= −75mA

= −200mA

=200mA, f=100MHz

Transition frequency

CB= −10V, IE=0A, f=1MHz

Collector output capacitance

Cob

−

Rev.B

1/2

US6T5

Transistors

zPackaging specifications

Taping

package

Type

Code

Basic ordering unit(pieces) 3000

US6T5

zElectrical characteristic curves

1000

CE=−2V

C B=20/1

Ta=25 C

Pulsed

Ta=100 C

Ta=25 C

Ta=−40 C

100

IC/IB=50/1

IC/IB=20/1

C/IB=10/1

0.1

Ta=−40 C

Ta=25 C

Ta=100 C

0.01

0.001

0.1

0.001

0.01

0.1

0.01

0.1

0.01

0.1

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : I

(A)

Fig.2 Collector-emitter saturation voltage

vs. collector current

Fig.3 Base-emitter saturation voltage

vs. collector current

Fig.1 DV current gain

vs. collector current

1000

10000

Ta=25 C

BE=−2V

Ta=25 C

CE=−2V

Pulsed

=−2V

IC/IB

^CE=20/1

f=100MHz

Pulsed

1000

100

Ta=100 C

tstg

Ta=25 C

Ta=−40 C

100

tdon

0.1

0.01

0.1

0.01

0.1

BASE TO EMITTER CURRENT : VBE (V)

EMITTER CURRENT : IE (A)

COLLECTOR CURRENT : IC(A)

Fig.4 Grounded emitter propagation

characteristics

Fig.5 Gain bandwidth product

vs. emitter curent

Fig.6 Switching time

1000

IC=0A

f=1MHz

Ta=25 C

Cib

100

Cob

0.001

0.01

0.1

100

EMITTER TO BASE VOLTAGE : VBE (V)

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

Rev.B

2/2

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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