US6X5TR [ROHM]
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT6, 6 PIN;
| 型号： | US6X5TR |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TUMT6, 6 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US6X5
Transistors
Low frequency amplifier (12V, 2A)
US6X5
zDimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) : max. 370mV
At lc=1.5A / lB=75mA
ROHUMT6 Abbreviated symbol
zAbsolute maximum ratings (Ta=25°C)
zEquvaleu
Parameter
Collector-base voltage
Symbol
Limits
15
12
6
Unit
V
(6)
5)
(4)
VCBO
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
V
I
C
4
400
A
A∗
Collector current
I
CP
Power dissipation
P
C
(1)
(2)
(3)
1.0
W
Junction temperature
Tj
Tsg
150
−55 to +150
°C
°C
Range of storage temperature
∗1 Single pulse, P =1ms
W
∗2Each Terminal Mounted on omended
∗3Mounted on a 25
mm
8m ceramic substrate
zElectrical charcteristics (Ta=°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min.
Typ.
−
−
−
−
−
90
−
360
20
Max.
−
−
Unit
V
Conditions
15
12
6
I
I
I
C
=10µA
=1mA
Collectoase breakdown volt
tor-emitter breakdown voltae
er-base breakdown voltage
Collector cutoff current
V
C
−
V
E
=10µA
I
CBO
EBO
CE(sat)
FE
−
−
−
270
−
100
100
180
680
−
nA
nA
mV
−
MHz
pF
V
V
CB=15V
EB=6V
I
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
V
I
C=1A, I
B
=50mA
h
V
V
V
CE=2V, I
CE=2V, I
C
=200mA∗
f
T
E
=−200mA, f=100MHz∗
Transition frequency
CB=10V, I
E=0A, f=1MHz
Cob
−
−
Collector output capacitance
∗ Pulsed
Rev.C
1/2
US6X5
Transistors
zPackaging specifications
Package
Taping
TR
Type
Code
Basic ordering unit (pieces)
3000
US6X5
zElectrical characteristic curves
1000
1
1
V
CE=2V
I
V
C B=20/1
/I
CE=2V
Pulsed
Ta=100°C
Ta=25°C
Pulsed
Pulsed
Ta=25°C
Ta=25°C
Ta=−40°C
0.1
0.01
0.1
Ta=100°C
Ta=−40°C
100
C/I
B
0/1
0.0
B
=20/1
I
C/I
B
=10/1
0.001
0.001
10
0.001
0.01
0.1
1
0.001
0.01
.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (
COLLECTOR CURRENT : I
C
(A)
COTOR RRENT : IC (A)
Fig.1 DC current gain
Fig.2 Base-emitter san voltage
vs. collector cur
Fig.3 Cctor-emitter saturation voltage
vs. cctor current
vs. collector current
10
1
1000
0
Ta=25°C
Ta=25°C
V
CE=2V
V
CE=5V
V
CE=2V
Pulsed
f=100MHz
f=100MH
tstg
100
Ta=100°C
Ta=25°C
00
0.1
0.01
Ta=−40°C
10
1
tdon
tf
0.001 0
0.5
1.5
10
tr
0.001
0.1
1
10
0.01
0.1
1
10
BASE TO R CUT : VBE (V)
EMITTER CURRENT : I
E
(A)
COLLECTOR CURRENT : I
Fig.6 Switching time
C (A)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.4 Grouemir propagation
characttics
1000
5˚C
1MH
I
C=
f
=
Cib
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB V)
(
COLLECTOR TO BASE VOLTAGE : VCB V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.C
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications fo
product described in this document are for reference only. Upon actual use, therefore, please reques
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples tandard
use and operation. Please pay careful attention to the peripheral conditions when desicuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, deed erein
are intended only as illustrations of such devices and not as the specificatior such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be infringement of any
third party's intellectual property rights or other proprietary rights, anfurtassumes no liablty of
whatsoever nature in the event of any such infringement, or arisfroor connected with oate
to the use of such devices.
Upon the sale of any such devices, other than for buyeht to use such deviceself, esell or
otherwise dispose of the same, no express or implied rt olicense to practor mmercially
exploit any intellectual property rights or other prietary rights ownerolled by
ROHM CO., LTD. is granted to any such buy.
Products listed in this document are no antiradon design.
The products listed in this document desed to be used wiinary electronic equipment or devices
(such as audio visual equipment, officutomation equipmecommunications devices, electrical
appliances and electronic toys
Should you intend to use these pts with equipmenes which require an extremely high level of
reliability and the malfution with would directly endaer human life (such as medical instruments,
transportation equipmeaospace machine, nuclear-reactor controllers, fuel controllers and other
safety devices), e be sure to consult wiour ales representative in advance.
About Control Order in Japan
Produdescribed herein are tjects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in an.
In case of export from Japalease confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
n the basis of "catcfor Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
US6X7TR
Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 2-Element, NPN, Silicon, TUMT6, 6 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明