VT6X11T2R [ROHM]
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, VMT6, 6 PIN;
| 型号： | VT6X11T2R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, VMT6, 6 PIN 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power management (dual transistors)
VT6X11
zStructure
zDimensions (Unit : mm)
NPN silicon epitaxial planar transistor
VMT6
0.5
± 0.1
1.2
(6)
±
0.1
(5)
(4)
zFeatures
0 ~ 0.05
1) Very small package with two transistors.
2) Suitable for current mirror circuits.
(1)
(2)
(3)
0.16
±
0.05
0.13
± 0.05
0.4
0.8
0.4
±
0.1
zApplications
Current mirror circuits
Abbreviated symbol : X11
Each lead has same dimensions.
UNIT : mm
zPackaging specifications
zInner circuit
Package
Code
Taping
T2R
(6)
(5)
(4)
(1) Base
(Tr1)
(2) Emitter
(3) Emitter
(Tr1)
(Tr2)
Basic ordering
unit (pieces)
8000
Type
Tr2
(4) Collector (Tr2)
(5) Collector (Tr1)
VT6X11
Tr1
(5) Base
(Tr2)
(6) Collector (Tr1)
z Absolute maximum ratings (Ta=25°C)
(6) Base
(Tr2)
(1)
(2)
(3)
Limits
20
Symbol
Unit
V
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
20
V
5
V
I
C
200
400
150
120
mA
mA
mW
mW
°C
Collector current
∗1
∗2
I
CP
Total
P
D
Power dissipation
Element
T
j
150
Junction temperature
−55 to +150
°C
T
stg
Range of storage temperature
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ. Max.
Unit
V
Conditions
20
20
5
−
−
−
−
−
−
−
−
0.1
0.1
0.30
560
I
I
I
C
=1mA
C=50µA
V
V
E
=50µA
CB=20V
EB=5V
I
CBO
EBO
CE(sat)
FE
FE (Tr1) /
−
−
−
120
µA
µA
V
V
V
Emitter cut-off current
I
Collector-emitter saturation voltage
DC current gain
V
I
C
=100mA, I =10mA
B
0.12
−
h
−
V
V
V
V
CE=2V, I
C=1mA
DC current gain ratio
Transition frequency
Output capacitance
h
hFE (Tr2) 0.9
−
400
2
1.1
−
−
−
MHz
pF
CE=2V, I
C=1mA
f
T
−
−
CE=10V, I
CB=10V, I
E
=−10mA, f=100MHz
=0A, f=1MHz
Cob
E
www.rohm.com
2009.06 - Rev.A
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
VT6X11
Data Sheet
zElectrical characteristics curves
IB=0.9mA IB=0.8mA
IB=1.0mA
100
80
60
40
20
0
1000
1000
100
10
V
CE=2V
V
CE =2V
I
B
B
=0.7mA
=0.6mA
I
100
10
Ta=125°C
25°C
I
B
=0.5mA
-55°C
I
I
I
B
B
B
=0.4mA
=0.3mA
=0.2mA
1
Ta=125°C
25°C
0.1
0.01
I
I
B
B
=0.1mA
=0mA
Ta=25°C
-55°C
ꢀꢀꢀ
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
0.1
1
10
100
1000
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR TO EMITTER VOLTAGE :
CE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
V
1
1
1000
100
10
I
C
/I = 10/1
B
V
CE = 10V
Ta=25°C
Ta=25°C
Ta=125°C
25°C
-55°C
IC/IB
= 20/1
IC/IB =10/1
0.1
0.1
0.01
0.01
1
10
100
1000
(mA)
1
10
100
1000
(mA)
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
EMITTER CURRENT : IE (mA)
100
10
1
Cib
Cob
Ta=25°C
f=1MHz
=0
=0
I
E
I
C
0
0.01
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB(V)
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2009.06 - Rev.A
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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