SSO-AD-1100-TO5I [ROITHNER]
Avalanche Photodiode; 雪崩光电二极管
| 型号： | SSO-AD-1100-TO5I |
| 厂家： | 
Roithner LaserTechnik GmbH |
| 描述： | Avalanche Photodiode |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSO-AD-1100-TO5i
Avalanche Photodiode
Special characteristics
High gain at low bias voltage
Fast rise time
1130 µm diameter active area
low capacitance
Parameters:
Package 3 (TO5i) :
active area
1,0 mm2
1130m
dark current 1)
(M=100)
max. 6 nA
Total capacitance 1)
(M=100)
typ.10 pF
2)
Break down UBR
(at ID=2µA)
typ. 160 V
Temperature coefficient of UBR
typ. 0,4 %/°C
typ. 0,45 A/W
typ. 0,35 GHz
typ. 1 ns
Spectral responsivity
at 780 nm
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
40 – 60
typ. 100
"Exess Noise" factor
(M=100)
typ. 2,2
typ. 0,2
"Exess Noise" index
(M=100)
N.E.P.
½
(M=100, 880 nm)
Operating temperature
Storage temperature
typ. 8 * 10-14 W/Hz
-20 ... +70°C
-60 ... +100°C
1) measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880nm, 80nm bandwidth).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage.
2) limited UBR range possible to agree
SSO - AD - serie
SSO - AD - serie
Spectral Responsivity at M=1
Spectral Responsivity at M=100
0,600
0,500
0,400
0,300
0,200
0,100
0,000
60
50
40
30
20
10
0
400
500
600
700
800
900
1000
1100
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Wavelength (nm)
SSO - AD - serie
quantum efficiency for M=1
Ctot=f(UR)
-
AD800 TO5i
80
70
60
50
40
30
20
10
0
1,00
0,90
0,80
0,70
0,60
0,50
0,40
0,30
0,20
0,10
0,00
0
20
40
60
80
100
400
480
560
640
720
800
880
960
1040
wavelength (nm)
UR [V]
AD800-TO5i
ID=f(UR/UBR
)
AD800-TO5i
Gain=f(UR/UBR
)
100000
10000
1000
100
1000
100
10
1
10
0,000
0,100
0,200
0,300
0,400
0,500
0,600
0,700
0,800
0,900
1,000
0,000
0,100
0,200
0,300
0,400
0,500
0,600
0,700
0,800
0,900
1,000
UR/UBR
UR/UBR
Maximum Ratings:
•
•
•
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
200 mW at 22°C
400 mW for 1 s
IPh (DC) ≤ 500 µA
Bias supply voltage
≤ 2 mA for signal 50 µs "on" / 1 ms "out"
Current limiting resistor
•
( Pelectr. = Popt. * Sabs * M * UR )
Application hints:
•
Current limit is to be realized via protecting resistor or current limiting - IC inside the
supply voltage.
min. 0,1 µF,
closest to APD
•
•
•
Use of low noise read-out - IC.
APD
For higher gain a regulation of bias voltage due to the temperature is to be realized.
For very small signals stray light (noise source) is to be excluded by filters in order to
improve the signal-noise relation.
Avoid touching the window with fingers!
Careful cleaning with Ethyl alcohol possible.
Diode, protective circuit
Read-out circuit or
•
•
•
Avoid use of pointed and scratching tools!
f.e. 50 Load resistance
Ω
Handling precautions:
•
•
•
•
Soldering temperature
min. Pin - length
ESD - protection
Storage
260°C for max. 10 s. The device must be protected against solder flux vapour!
2mm
Only small danger for the device. Standard precautionary measures are sufficient.
Store devices in conductive foam.
2000/03
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