SSO-AD-1100-TO5I [ROITHNER]

Avalanche Photodiode; 雪崩光电二极管
SSO-AD-1100-TO5I
型号: SSO-AD-1100-TO5I
厂家: Roithner LaserTechnik GmbH    Roithner LaserTechnik GmbH
描述:

Avalanche Photodiode
雪崩光电二极管

光电 二极管 光电二极管
文件: 总2页 (文件大小:57K)
中文:  中文翻译
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SSO-AD-1100-TO5i  
Avalanche Photodiode  
Special characteristics  
High gain at low bias voltage  
Fast rise time  
1130 µm diameter active area  
low capacitance  
Parameters:  
Package 3 (TO5i) :  
active area  
1,0 mm2  
1130m  
dark current 1)  
(M=100)  
max. 6 nA  
Total capacitance 1)  
(M=100)  
typ.10 pF  
2)  
Break down UBR  
(at ID=2µA)  
typ. 160 V  
Temperature coefficient of UBR  
typ. 0,4 %/°C  
typ. 0,45 A/W  
typ. 0,35 GHz  
typ. 1 ns  
Spectral responsivity  
at 780 nm  
Cut-off frequency  
(-3dB)  
Rise time  
Optimum gain  
Gain M  
40 – 60  
typ. 100  
"Exess Noise" factor  
(M=100)  
typ. 2,2  
typ. 0,2  
"Exess Noise" index  
(M=100)  
N.E.P.  
½
(M=100, 880 nm)  
Operating temperature  
Storage temperature  
typ. 8 * 10-14 W/Hz  
-20 ... +70°C  
-60 ... +100°C  
1) measurement conditions:  
Setup of photo current 10nA at M=1 and irradiation by a  
NIR-LED (880nm, 80nm bandwidth).  
Rise of the photo current up to 1 µA, (M=100) by internal  
multiplication due to an increasing bias voltage.  
2) limited UBR range possible to agree  
SSO - AD - serie  
SSO - AD - serie  
Spectral Responsivity at M=1  
Spectral Responsivity at M=100  
0,600  
0,500  
0,400  
0,300  
0,200  
0,100  
0,000  
60  
50  
40  
30  
20  
10  
0
400  
500  
600  
700  
800  
900  
1000  
1100  
400  
500  
600  
700  
800  
900  
1000  
1100  
Wavelength (nm)  
Wavelength (nm)  
SSO - AD - serie  
quantum efficiency for M=1  
Ctot=f(UR)  
-
AD800 TO5i  
80  
70  
60  
50  
40  
30  
20  
10  
0
1,00  
0,90  
0,80  
0,70  
0,60  
0,50  
0,40  
0,30  
0,20  
0,10  
0,00  
0
20  
40  
60  
80  
100  
400  
480  
560  
640  
720  
800  
880  
960  
1040  
wavelength (nm)  
UR [V]  
AD800-TO5i  
ID=f(UR/UBR  
)
AD800-TO5i  
Gain=f(UR/UBR  
)
100000  
10000  
1000  
100  
1000  
100  
10  
1
10  
0,000  
0,100  
0,200  
0,300  
0,400  
0,500  
0,600  
0,700  
0,800  
0,900  
1,000  
0,000  
0,100  
0,200  
0,300  
0,400  
0,500  
0,600  
0,700  
0,800  
0,900  
1,000  
UR/UBR  
UR/UBR  
Maximum Ratings:  
max. electrical power dissipation  
max. optical peak value, once  
max. continous optical operation  
200 mW at 22°C  
400 mW for 1 s  
IPh (DC) 500 µA  
Bias supply voltage  
2 mA for signal 50 µs "on" / 1 ms "out"  
Current limiting resistor  
( Pelectr. = Popt. * Sabs * M * UR )  
Application hints:  
Current limit is to be realized via protecting resistor or current limiting - IC inside the  
supply voltage.  
min. 0,1 µF,  
closest to APD  
Use of low noise read-out - IC.  
APD  
For higher gain a regulation of bias voltage due to the temperature is to be realized.  
For very small signals stray light (noise source) is to be excluded by filters in order to  
improve the signal-noise relation.  
Avoid touching the window with fingers!  
Careful cleaning with Ethyl alcohol possible.  
Diode, protective circuit  
Read-out circuit or  
Avoid use of pointed and scratching tools!  
f.e. 50 Load resistance  
Handling precautions:  
Soldering temperature  
min. Pin - length  
ESD - protection  
Storage  
260°C for max. 10 s. The device must be protected against solder flux vapour!  
2mm  
Only small danger for the device. Standard precautionary measures are sufficient.  
Store devices in conductive foam.  
2000/03  

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