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RU190N10R

更新时间：2024-09-18 12:30:29

品牌：RUICHIPS

描述：N-Channel Advanced Power MOSFET

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RU190N10R 概述

N-Channel Advanced Power MOSFET N沟道先进的功率MOSFET

RU190N10R 数据手册

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RU190N10

N-Channel Advanced Power MOSFET

Features

Pin Description

· 100V/190A

RDS (ON)=6.5mW(Typ.) @ VGS=10V

·Avalanche Rated

TO-220

TO-263

TO-220F

TO-247

· Reliable and Rugged

· Lead Free and Green Devices Available

Applications

·Automotive applications and a wide

variety of other applications

·High Efficiency Synchronous in SMPS

·High Speed Power Switching

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

100

±25

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

175

Maximum Junction Temperature

-55 to 175

T_STG

Storage Temperature Range

Diode Continuous Forward Current

TC=25°C

190

Mounted on Large Heat Sink

①

I_DP

I_D

T =25°C

TC=25°C

300ms Pulsed Drain Current Tested

700

②

190

140

Continue Drain Current

TC=100°C

TC=25°C

TC=100°C

400

P_D

Maximum Power Dissipation

220

RqJC

RqJA

Thermal Resistance -Junction to Case

Thermal Resistance-Junction to Ambient

0.45

°C/W

62.5

Drain-Source Avalanche Ratings

EAS

Avalanche Energy ,Single Pulsed

2000

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Electrical Characteristics (T_A=25°C Unless Otherwise Noted)

RU190N10

Symbol

Parameter

Test Condition

Unit

Min. Typ. Max.

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage V_GS=0V, I_DS=250mA

100

V_DS= 100V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

T_J=85°C

V_DS=V_GS, I_DS=250mA

V_GS=±25V, V_DS=0V

Drain-Source On-state Resistance V_GS= 10V, I_DS=60A

V_GS(th)Gate Threshold Voltage

I_GSSGate Leakage Current

±100

8.0

③

6.5

R_DS(ON)

Diode Characteristics

③

Diode Forward Voltage

I_SD=60 A, V_GS=0V

0.8

1.3

V_SD

trr

Reverse Recovery Time

ISD=60A, dlSD/dt=100A/ms

qrr

Reverse Recovery Charge

130

④

Dynamic Characteristics

R_G

C_iss

C_oss

C_rss

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

1.0

6700

1000

510

Input Capacitance

VGS=0V,

VDS= 30V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

t_d(ON)Turn-on Delay Time

t_rTurn-on Rise Time

t_d(OFF)Turn-off Delay Time

t_fTurn-off Fall Time

VDD=35V, RL=35W,

IDS= 1A, VGEN= 10V,

RG=6W

120

210

140

④

Gate Charge Characteristics

Q_g

Q_gs

Q_gd

Total Gate Charge

155

220

VDS=30V, VGS= 10V,

IDS=60A

Gate-Source Charge

Gate-Drain Charge

Notes: ①Pulse width limited by safe operating area.

②Current limited by package( Limitation Current is 75A )

③Pulse test ; Pulse width£300ms, duty cycle£2%.

④Guaranteed by design, not subject to production testing.

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Typical Characteristics

Power Dissipation

Drain Current

T_j- Junction Temperature (°C)

Tj - Junction Temperature (°C)

Safe Operation Area

Thermal Transient Impedance

V_DS- Drain-Source Voltage (V)

Square Wave Pulse Duration (sec)

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Typical Characteristics

Output Characteristics

Drain-Source On Resistance

V_DS- Drain-Source Voltage (V)

Drain-Source On Resistance

I_D- Drain Current (A)

Gate Threshold Voltage

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (°C)

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Typical Characteristics

Drain-Source On Resistance

Source-Drain Diode Forward

RON@T=25ºC:7.0mΩ

T_j- Junction Temperature (°C)

V_SD- Source-Drain Voltage (V)

Capacitance

Gate Charge

V_DS- Drain-Source Voltage (V)

Q_G- Gate Charge (nC)

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Ordering and Marking Information

RU190N10

Package (Available)

Q:TO-247 ; R: TO-220 ; S: TO-263

Operating Temperature Range

C : -55 to 175 ºC

Assembly Material

G : Green & Lead Free Device

Packaging

T : TUBE

TR : Tape & Reel

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Package Information

TO-220FB-3L

INCH

SYMBOL

MIN

4.40

1.27

2.35

0.77

1.23

0.48

NOM MAX

MIN NOM MAX

0.173 0.180 0.185

0.050 0.051 0.052

0.093 0.094 0.098

MIN

1.40

NOM MAX

MIN

NOM MAX

0.055 0.059 0.063

0.1BSC

4.57

1.30

2.40

4.70

1.33

2.50

0.90

1.36

0.52

Øp1

1.50

2.54BSC

5.08BSC

6.50

1.60

0.2BSC

0.030

0.048

0.035

0.054

6.40

12.75

6.60

0.252 0.256 0.260

13.17 0.502

0.519

0.156

0.50

0.019 0.020 0.021

Øp

3.95

15.40 15.60 15.80 0.606 0.614 0.622

2.50REF.

3.60

0.098REF.

DEP

9.00

0.05

9.70

9.10

0.10

9.90

8.70

9.20

0.20

0.354 0.358 0.362

0.002 0.004 0.008

3.57

2.73

5°

1°

3.63

2.87

9°

5°

0.141 0.142 0.143

0.107 0.110 0.113

2.80

10.10 0.382 0.389 0.398

0.343

7°

5°

1°

7°

3°

9°

5°

θ1

θ2

3°

9.80

10.00 10.20 0.386 0.394 0.401

ALL DIMENSIONS REFER TO JEDEC STANDARD

DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

TO-263-2L

INCH

SYMBOL

MIN

4.40

NOM MAX

MIN NOM MAX

0.173 0.180 0.185

MIN

2.00

1.17

NOM MAX

MIN

NOM MAX

0.079 0.090 0.102

0.046 0.050 0.055

4.57

4.70

0.25

2.79

0.90

1.36

0.47

1.32

8.80

2.30

1.27

2.60

1.40

1.70

0.10

0.004 0.010

2.59

0.77

1.23

0.34

1.22

8.60

2.69

0.102 0.106 0.110

0.01BSC

0.098REF.

0.067

0.030

0.048

0.013

0.048

0.035

0.052

0.019

0.052

0.25BSC

2.50REF.

0°

5°

1°

0.05

1.40

8°

9°

5°

0.20

1.60

0°

5°

1°

8°

9°

5°

7°

θ1

θ2

DEP

Øp1

8.70

0.338 0.343 0.346

3°

10.00 10.16 10.26 0.394

2.54BSC

0.4

0.404

0.10

1.50

0.002 0.004 0.008

0.055 0.059 0.063

0.1BSC

14.70 15.10 15.50 0.579 0.594 0.610

ALL DIMENSIONS REFER TO JEDEC STANDARD

DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

TO-247

INCH

SYMBOL

MIN

4.850

2.200

1.000

2.800

1.800

0.500

1.900

15.450

MAX

5.150

2.600

1.400

3.200

2.200

0.700

2.100

15.750

MIN

MAX

0.200

0.102

0.055

0.126

0.087

0.028

0.083

0.620

MIN

MAX

MIN

MAX

0,191

0.087

0.039

0.110

0.071

0.020

0.075

0.608

3.600 REF

0.142 REF

40.900

41.300

25.100

20.600

7.300

1.610

0.976

0.799

0.280

1.626

0.988

0.811

0.287

24.800

20.300

7.100

5.450 TYP

5.980 REF.

0.000 0.300

0.215 TYP

0.235 REF.

0.000 0.012

3.500 REF.

0.138 REF.

ALL DIMENSIONS REFER TO JEDEC STANDARD

DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

RU190N10

Customer Service

Worldwide Sales and Service:

Sales@ruichips.com

Technical Support:

Technical@ruichips.com

Investor Relations Contacts:

Investor@ruichips.com

Marcom Contact:

Marcom@ruichips.com

Editorial Contact:

Editorial@ruichips.com

HR Contact:

HR@ruichips.com

Legal Contact:

Legal@ruichips.com

Shen Zhen RUICHIPS Semiconductor CO., LTD

Room 501, the 5floor An Tong Industrial Building,

NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA

TEL: (86-755) 8311-5334

FAX: (86-755) 8311-4278

E-mail: Sales-SZ@ruichips.com

CopyrightÓ Ruichips Semiconductor Co., Ltd

Rev. C – JAN., 2010

www.ruichips.com

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