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RU1H40L

更新时间：2025-07-13 12:30:29
品牌：RUICHIPS
描述：N-Channel Advanced Power MOSFET

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免费 PCB/SMT

RU1H40L 概述

N-Channel Advanced Power MOSFET N沟道先进的功率MOSFET

RU1H40L 数据手册

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RU1H40L  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 100V/40A,  
R
R
DS (ON) =22mΩ(tpy.)@VGS=10V  
DS (ON) =28mΩ(tpy.)@VGS=4.5V  
• Super High Dense Cell Design  
• Fast Switching and Fully Avalanche Rated  
• Reliable and Rugged  
TO252  
• 100% avalanche tested  
• Lead Free and Green Devices Available  
(RoHS Compliant)  
Applications  
• High Speed Power Switching.  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
100  
±25  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
V
Gate-Source Voltage  
°C  
°C  
A
175  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
TSTG  
IS  
-55 to 175  
40  
TC=25°C  
TC=25°C  
Mounted on Large Heat Sink  
①
160  
IDP  
300μs Pulse Drain Current Tested  
A
A
②
40  
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
ID  
Continuous Drain Current(VGS=10V)  
30  
97  
PD  
Maximum Power Dissipation  
W
48  
1.55  
RqJC  
Thermal Resistance-Junction to Case  
°C/W  
Drain-Source Avalanche Ratings  
③
110  
Avalanche Energy, Single Pulsed  
mJ  
EAS  
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Electrical Characteristics (TC=25°C Unless Otherwise Noted)  
RU1H40L  
Symbol  
Parameter  
Test Condition  
Unit  
Min. Typ. Max.  
Static Characteristics  
BVDSS Drain-Source Breakdown Voltage  
IDSS Zero Gate Voltage Drain Current  
VGS(th) Gate Threshold Voltage  
V
VGS=0V, IDS=250mA  
100  
VDS= 100V, VGS=0V  
1
mA  
TJ=85°C  
30  
V
VDS=VGS, IDS=250mA  
1.5  
2
3
IGSS  
Gate Leakage Current  
VGS=±25V, VDS=0V  
nA  
±100  
VGS= 10V, IDS=20A  
VGS= 4.5V, IDS=14A  
22  
28  
25  
50  
mW  
mW  
④
Drain-Source On-state Resistance  
RDS(ON)  
Diode Characteristics  
④
Diode Forward Voltage  
ISD=20A, VGS=0V  
1.2  
V
VSD  
trr  
Reverse Recovery Time  
95  
ns  
ISD=20A, dlSD/dt=100A/ms  
Qrr  
Reverse Recovery Charge  
nC  
415  
⑤
Dynamic Characteristics  
RG  
Ciss  
Coss  
Crss  
Gate Resistance  
VGS=0V,VDS=0V,F=1MHz  
W
2.6  
1940  
210  
110  
20  
Input Capacitance  
VGS=0V,  
VDS= 50V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
td(ON) Turn-on Delay Time  
tr Turn-on Rise Time  
td(OFF) Turn-off Delay Time  
tf Turn-off Fall Time  
VDD=50V, RL=2.5W,  
IDS=20A, VGEN= 10V,  
RG=4.7W  
55  
ns  
50  
22  
⑤
Gate Charge Characteristics  
Qg  
Qgs  
Qgd  
Total Gate Charge  
40  
8
VDS=80V, VGS= 10V,  
IDS=20A  
nC  
Gate-Source Charge  
Gate-Drain Charge  
16  
Notes:  
Pulse width limited by safe operating area.  
Calculated continuous current based on maximum allowable junction temperature.  
Limited by TJmax, IAS =21A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.  
Pulse test ; Pulse width£300ms, duty cycle£2%.  
Guaranteed by design, not subject to production testing.  
2
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Typical Characteristics  
Power Dissipation  
Drain Current  
Tj - Junction Temperature (°C)  
Tj - Junction Temperature (°C)  
Safe Operation Area  
Thermal Transient Impedance  
VDS - Drain-Source Voltage (V)  
Square Wave Pulse Duration (sec)  
3
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Typical Characteristics  
Output Characteristics  
Drain-Source On Resistance  
VDS - Drain-Source Voltage (V)  
Drain-Source On Resistance  
ID - Drain Current (A)  
Gate Threshold Voltage  
VGS - Gate-Source Voltage (V)  
Tj - Junction Temperature (°C)  
4
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Typical Characteristics  
Drain-Source On Resistance  
Source-Drain Diode Forward  
Tj - Junction Temperature (°C)  
Capacitance  
VSD - Source-Drain Voltage (V)  
Gate Charge  
VDS - Drain-Source Voltage (V)  
QG - Gate Charge (nC)  
5
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Avalanche Test Circuit and Waveforms  
Switching Time Test Circuit and Waveforms  
6
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Ordering and Marking Information  
RU1H40  
Package (Available)  
L : TO252  
Operating Temperature Range  
C : -55 to 175 ºC  
Assembly Material  
G : Green & Lead Free  
Packaging  
T : TUBE  
TR : Tape & Reel  
7
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Package Information  
TO252-2L  
MM  
INCH  
MM  
INCH  
SYMBOL  
SYMBOL  
MIN  
2.200  
0.000  
0.660  
0.460  
6.500  
5.100  
MAX  
2.400  
0.127  
0.860  
0.580  
6.700  
5.460  
MIN  
0.087  
0.000  
0.026  
0.018  
0.256  
0.201  
MAX  
0.094  
0.005  
0.034  
0.023  
0.264  
0.215  
MIN  
MAX  
MIN  
MAX  
0.409  
A
A1  
b
L
L1  
L2  
L3  
L4  
Φ
θ
h
9.800  
10.400  
0.386  
2.900 REF.  
1.400 1.700  
1.600 REF.  
0.114 REF.  
0.055  
0.067  
C
0.063REF.  
D
0.600  
1.000  
1.300  
8°  
0.024  
0.043  
0°  
0.039  
0.051  
8°  
D1  
D2  
E
1.100  
0°  
4.830 REF.  
0.190 REF.  
6.000  
2.186  
6.200  
2.386  
0.236  
0.086  
0.244  
0.094  
0.000  
0.300  
0.000  
0.012  
e
V
5.350 REF.  
0.211 REF.  
ALL DIMENSIONS REFER TO JEDEC STANDARD  
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS  
8
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  
RU1H40L  
Customer Service  
Worldwide Sales and Service:  
Sales@ruichips.com  
Technical Support:  
Technical@ruichips.com  
Investor Relations Contacts:  
Investor@ruichips.com  
Marcom Contact:  
Marcom@ruichips.com  
Editorial Contact:  
Editorial@ruichips.com  
HR Contact:  
HR@ruichips.com  
Legal Contact:  
Legal@ruichips.com  
Shen Zhen RUICHIPS Semiconductor CO., LTD  
Room 501, the 5floor An Tong Industrial Building,  
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA  
TEL: (86-755) 8311-5334  
FAX: (86-755) 8311-4278  
E-mail: Sales-SZ@ruichips.com  
9
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– NOV., 2011  
www.ruichips.com  

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