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RU1H40L N-Channel Advanced Power MOSFET
Prototype PCB
Part No.:   RU1H40L
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Description:   N-Channel Advanced Power MOSFET
File Size :   281 K    
Page : 9 Pages
Logo:   
Maker   RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]http://www.ruichips.com
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100%
RU1H40L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/40A,
R
DS (ON)
=22mΩ(tpy.)@V
=10V
R
DS (ON)
=28mΩ(tpy.)@V
=4.5V
Super High Dense Cell Design
Fast Switching and Fully Avalanche Rated
Reliable and Rugged
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO252
Applications
• High Speed
Power Switching.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
±25
175
-55 to 175
T
C
=25°C
40
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
160
40
A
A
30
97
48
1.55
W
°C/W
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
110
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
www.ruichips.com
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