RU1H40L

N-Channel Advanced Power MOSFET

MOSFET

Features

• 100V/40A,

R

DS (ON)

=22mΩ(tpy.)@V

=10V

R

DS (ON)

=28mΩ(tpy.)@V

=4.5V

•

Super High Dense Cell Design

•

Fast Switching and Fully Avalanche Rated

•

Reliable and Rugged

•

100% avalanche tested

• Lead Free and Green Devices Available

(RoHS Compliant)

Pin Description

TO252

Applications

• High Speed

Power Switching.

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

100

±25

175

-55 to 175

T

C

=25°C

40

①

Unit

Common Ratings

(T

C

=25°C Unless Otherwise Noted)

V

DSS

V

GSS

T

J

T

STG

I

S

I

DP

I

D

Drain-Source Voltage

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

V

°C

°C

A

Mounted on Large Heat Sink

300μs Pulse Drain Current Tested

Continuous Drain Current(V

GS

=10V)

T

C

=25°C

T

C

=25°C

T

C

=100°C

P

D

R

θJC

③

160

40

A

A

②

30

97

48

1.55

W

°C/W

Maximum Power Dissipation

Thermal Resistance-Junction to Case

T

C

=25°C

T

C

=100°C

Drain-Source Avalanche Ratings

E

AS

Avalanche Energy, Single Pulsed

110

mJ

Copyright© Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2011

www.ruichips.com