RU2020H [RUICHIPS]
N-Channel Advanced Power MOSFET; N沟道先进的功率MOSFET
| 型号： | RU2020H |
| 厂家： | 
RUICHIPS SEMICONDUCTOR CO., LTD |
| 描述： | N-Channel Advanced Power MOSFET |
| 文件： | 总9页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RU2020H
N-Channel Advanced Power MOSFET
Features
Pin Description
• 20V/20A,
R
R
R
DS (ON) =3.5mW(Typ.) @ VGS=10V
DS (ON) =3.8mW(Typ.) @ VGS=4.5V
DS (ON) =5.6mW(Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
SOP-8
• Lead Free and Green Available
Applications
• DC/DC Converter
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
20
±12
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
4.4
TA=25°C
TA=25°C
Mounted on Large Heat Sink
①
70
IDP
300μs Pulse Drain Current Tested
A
A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
20
ID
Continuous Drain Current(VGS=10V)
17
3.1
PD
Maximum Power Dissipation
W
2
②
RqJA
40
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU2020H
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
20
VDS=20V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
0.5
1
1.5
IGSS
Gate Leakage Current
VGS=±12V, VDS=0V
nA
±100
VGS=10V, IDS=20A
VGS=4.5V, IDS=16A
VGS=2.5V, IDS=12A
3.5
3.8
5.6
5.2
6.5
9
mW
mW
mW
③
Drain-Source On-state Resistance
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=1A, VGS=0V
1
V
VSD
trr
Reverse Recovery Time
27
39
ns
ISD=10A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
2
3680
1530
370
20
Input Capacitance
VGS=0V,
VDS=10V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=10V, RL=1W,
IDS=10A, VGEN=4.5V,
RG=6W
25
ns
92
45
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
53
11
20
VDS=16V, VGS=4.5V,
IDS=10A
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t £10sec.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Typical Characteristics
Power Dissipation
Drain Current
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
ID - Drain Current (A)
Gate Threshold Voltage
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
4
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
5
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
6
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size Tape width
RU2020H
RU2020H
SOP-8
Tape&Reel
2500
13’’
12mm
7
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Package Information
SOP-8
MM
INCH
MAX
0.069
MM
INCH
MIN MAX
SYMBOL
SYMBOL
MIN
1.350
0.100
1.350
0.330
0.170
4.700
MAX
1.750
0.250
1.550
0.510
0.250
5.100
MIN
0.053
0.004
0.053
0.013
0.006
0.185
MIN
3.800
5.800
MAX
4.000
6.200
A
A1
A2
b
E
E1
e
0.150
0.228
0.157
0.244
0.010
0.061
0.020
0.010
0.200
1.270 (BSC)
0.050 (BSC)
L
0.400
0°
1.270
0.016
0.050
c
θ
8°
0°
8°
D
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
8
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
Customer Service
Worldwide Sales and Service:
Sales@ruichips.com
Technical Support:
Technical@ruichips.com
Investor Relations Contacts:
Investor@ruichips.com
Marcom Contact:
Marcom@ruichips.com
Editorial Contact:
Editorial@ruichips.com
HR Contact:
HR@ruichips.com
Legal Contact:
Legal@ruichips.com
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: Sales-SZ@ruichips.com
9
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
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