RU2H50R

N-Channel Advanced Power MOSFET

MOSFET

Features

• 200V/60A,

R

DS (ON)

=36

mΩ

(Type) @ V

GS

=10V

•

Low Gate Charge

•

Fast Switching

•

100% avalanche tested

•

175°C Operating Temperature

• Lead Free,RoHS compliant

Pin Description

TO-220

Applications

•

Switching Application

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

Parameter

Rating

200

±25

175

-55 to 175

T

C

=25°C

60

①

Unit

Common Ratings

(T

A

=25°C Unless Otherwise Noted)

V

DSS

V

GSS

T

J

T

STG

I

S

I

DP

I

D

Drain-Source Voltage

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

V

°C

°C

A

Mounted on Large Heat Sink

300μs Pulse Drain Current Tested

Continuous Drain Current

T

C

=25°C

T

C

=25°C

T

C

=100°C

P

D

R

θJC

③

230

60

A

A

②

Maximum Power Dissipation

Thermal Resistance-Junction to Case

T

C

=25°C

T

C

=100°C

45

312

156

②

W

°C/W

0.48

Drain-Source Avalanche Ratings

E

AS

Avalanche Energy, Single Pulsed

140

mJ

Copyright© Ruichips Semiconductor Co., Ltd

Rev. A– FEB., 2012

www.ruichips.com