首页 > RU2H50R

RU2H50R

更新时间：2025-07-13 12:30:29
品牌：RUICHIPS
描述：N-Channel Advanced Power MOSFET

PDF下载

中文翻译

免费 PCB/SMT

RU2H50R 概述

N-Channel Advanced Power MOSFET N沟道先进的功率MOSFET

RU2H50R 数据手册

通过下载RU2H50R数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
RU2H50R  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 200V/60A,  
R
DS (ON) =36mW(Type) @ VGS=10V  
• Low Gate Charge  
• Fast Switching  
• 100% avalanche tested  
• 175°C Operating Temperature  
• Lead Free,RoHS compliant  
TO-220  
Applications  
• Switching Application  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TA=25°C Unless Otherwise Noted)  
200  
±25  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
V
Gate-Source Voltage  
°C  
°C  
A
175  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
TSTG  
IS  
-55 to 175  
60  
TC=25°C  
TC=25°C  
Mounted on Large Heat Sink  
①
230  
IDP  
300μs Pulse Drain Current Tested  
A
A
②
60  
TC=25°C  
TC=100°C  
TC=25°C  
TC=100°C  
ID  
Continuous Drain Current  
②
45  
312  
156  
0.48  
PD  
Maximum Power Dissipation  
W
RqJC  
Thermal Resistance-Junction to Case  
°C/W  
Drain-Source Avalanche Ratings  
③
140  
Avalanche Energy, Single Pulsed  
mJ  
EAS  
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Electrical Characteristics (TA=25°C Unless Otherwise Noted)  
RU2H50R  
Symbol  
Parameter  
Test Condition  
Unit  
Min. Typ. Max.  
Static Characteristics  
BVDSS Drain-Source Breakdown Voltage  
V
VGS=0V, IDS=250mA  
200  
VDS= 200V, VGS=0V  
1
IDSS Zero Gate Voltage Drain Current  
mA  
TJ=85°C  
30  
VGS(th) Gate Threshold Voltage  
IGSS Gate Leakage Current  
V
VDS=VGS, IDS=250mA  
2
3
4
VGS=±25V, VDS=0V  
nA  
±100  
④
Drain-Source On-state Resistance VGS= 10V, IDS=28A  
36  
43  
mW  
RDS(ON)  
Diode Characteristics  
④
Diode Forward Voltage  
ISD=28A, VGS=0V  
1.2  
V
VSD  
trr  
Reverse Recovery Time  
212  
980  
ns  
ISD=28A, dlSD/dt=100A/ms  
Qrr  
Reverse Recovery Charge  
nC  
⑤
Dynamic Characteristics  
RG  
Ciss  
Coss  
Crss  
Gate Resistance  
VGS=0V,VDS=0V,F=1MHz  
W
3.8  
4550  
620  
155  
18  
Input Capacitance  
VGS=0V,  
VDS=50V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
td(ON) Turn-on Delay Time  
tr Turn-on Rise Time  
td(OFF) Turn-off Delay Time  
tf Turn-off Fall Time  
VDD=100V, RL=35W,  
IDS=28A, VGEN= 10V,  
RG=6W  
70  
ns  
56  
45  
⑤
Gate Charge Characteristics  
Qg  
Qgs  
Qgd  
Total Gate Charge  
160  
29  
208  
VDS=160V, VGS= 10V,  
IDS=28A  
nC  
Gate-Source Charge  
Gate-Drain Charge  
70  
Notes:  
Pulse width limited by safe operating area.  
Calculated continuous current based on maximum allowable junction temperature. Current limited by  
bond wire.  
Limited by TJmax, IAS =20A, VDD = 60V, RG = 47Ω , Starting TJ = 25°C.  
Pulse test ; Pulse width£300ms, duty cycle£2%.  
Guaranteed by design, not subject to production testing.  
2
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Typical Characteristics  
Power Dissipation  
Drain Current  
Tj - Junction Temperature (°C)  
Tj - Junction Temperature (°C)  
Safe Operation Area  
Thermal Transient Impedance  
VDS - Drain-Source Voltage (V)  
Square Wave Pulse Duration (sec)  
3
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Typical Characteristics  
Output Characteristics  
Drain-Source On Resistance  
VDS - Drain-Source Voltage (V)  
Drain-Source On Resistance  
ID - Drain Current (A)  
Gate Threshold Voltage  
VGS - Gate-Source Voltage (V)  
Tj - Junction Temperature (°C)  
4
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Typical Characteristics  
Drain-Source On Resistance  
Source-Drain Diode Forward  
Tj - Junction Temperature (°C)  
Capacitance  
VSD - Source-Drain Voltage (V)  
Gate Charge  
VDS - Drain-Source Voltage (V)  
QG - Gate Charge (nC)  
5
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Avalanche Test Circuit and Waveforms  
Switching Time Test Circuit and Waveforms  
6
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Ordering and Marking Information  
Device  
Marking  
Package  
Packaging  
Quantity  
Reel Size Tape width  
RU2H50R  
RU2H50R  
TO-220  
Tube  
50  
-
-
7
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Package Information  
TO-220FB-3L  
MM  
INCH  
MM  
INCH  
SYMBOL  
SYMBOL  
MIN  
4.40  
1.27  
2.35  
0.77  
1.23  
0.48  
NOM MAX  
MIN NOM MAX  
0.173 0.180 0.185  
0.050 0.051 0.052  
0.093 0.094 0.098  
MIN  
1.40  
NOM MAX  
MIN  
NOM MAX  
A
A1  
A2  
b
4.57  
1.30  
2.40  
-
4.70  
1.33  
2.50  
0.90  
1.36  
0.52  
Øp1  
e
1.50  
2.54BSC  
5.08BSC  
6.50  
1.60  
0.055 0.059 0.063  
0.1BSC  
e1  
H1  
L
0.2BSC  
0.030  
0.048  
-
-
0.035  
0.054  
6.40  
12.75  
-
6.60  
0.252 0.256 0.260  
b2  
C
-
-
13.17 0.502  
-
0.519  
0.156  
0.50  
0.019 0.020 0.021  
L1  
L2  
Øp  
Q
-
3.95  
-
-
D
15.40 15.60 15.80 0.606 0.614 0.622  
2.50REF.  
3.60  
0.098REF.  
D1  
DEP  
E
9.00  
0.05  
9.70  
-
9.10  
0.10  
9.90  
8.70  
9.20  
0.20  
0.354 0.358 0.362  
0.002 0.004 0.008  
3.57  
2.73  
5°  
1°  
3.63  
2.87  
9°  
5°  
0.141 0.142 0.143  
0.107 0.110 0.113  
2.80  
10.10 0.382 0.389 0.398  
0.343  
7°  
5°  
1°  
7°  
3°  
9°  
5°  
θ1  
θ2  
E1  
E2  
-
-
-
3°  
9.80  
10.00 10.20 0.386 0.394 0.401  
ALL DIMENSIONS REFER TO JEDEC STANDARD  
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS  
8
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  
RU2H50R  
Customer Service  
Worldwide Sales and Service:  
Sales@ruichips.com  
Technical Support:  
Technical@ruichips.com  
Investor Relations Contacts:  
Investor@ruichips.com  
Marcom Contact:  
Marcom@ruichips.com  
Editorial Contact:  
Editorial@ruichips.com  
HR Contact:  
HR@ruichips.com  
Legal Contact:  
Legal@ruichips.com  
Shen Zhen RUICHIPS Semiconductor CO., LTD  
Room 501, the 5floor An Tong Industrial Building,  
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA  
TEL: (86-755) 8311-5334  
FAX: (86-755) 8311-4278  
E-mail: Sales-SZ@ruichips.com  
9
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– FEB., 2012  
www.ruichips.com  

RU2H50R 相关器件

型号 制造商 描述 价格 文档
RU2H50S RUICHIPS N-Channel Advanced Power MOSFET 获取价格
RU2HE2D RUICHIPS N-Channel Advanced Power MOSFET 获取价格
RU2HE5L RUICHIPS N-Channel Advanced Power MOSFET 获取价格
RU2JG GULFSEMI FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A 获取价格
RU2JGF GULFSEMI SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A 获取价格
RU2KG GULFSEMI FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A 获取价格
RU2KGF GULFSEMI SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:800V CURRENT: 1.0A 获取价格
RU2M EIC FAST RECOVERY RECTIFIER DIODES 获取价格
RU2M SANKEN Fast-Recovery Rectifier Diodes 获取价格
RU2M BL Galaxy Electrical HIGH EFFICIENCY RECTIFIER 获取价格

RU2H50R 相关文章

  • 三星携纳米棱镜技术图像传感器入局，打破小米供应链索尼垄断局面
    2025-07-15
    17
  • 运算放大器输入保护：噪声隐患与 JFET 解决方案
    2025-07-15
    19
  • 技术革新助力，国产 Wi-Fi 芯片全面起飞在即
    2025-07-15
    18
  • 突破！世界首个集成电子 - 光子 - 量子芯片问世
    2025-07-15
    22

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286