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RU2H50R N-Channel Advanced Power MOSFET
Prototype PCB
Part No.:   RU2H50R
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Description:   N-Channel Advanced Power MOSFET
File Size :   292 K    
Page : 9 Pages
Logo:   
Maker   RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]http://www.ruichips.com
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RU2H50R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/60A,
R
DS (ON)
=36
mΩ
(Type) @ V
GS
=10V
Low Gate Charge
Fast Switching
100% avalanche tested
175°C Operating Temperature
• Lead Free,RoHS compliant
Pin Description
TO-220
Applications
Switching Application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
200
±25
175
-55 to 175
T
C
=25°C
60
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
230
60
A
A
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
45
312
156
W
°C/W
0.48
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
140
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
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