STD1224N [SAMHOP]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | STD1224N |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：936K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TU/D1224N
S amHop Microelectronics C orp.
Dec 20,2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m Ω) Max
80 @ VG S = 4.5V
130 @ VG S = 2.5V
24V
12A
TO-252 and TO-251 P ackage.
D
D
G
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATING S
(T =25 C unles s otherwis e noted)
A
Limit
24
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
12
12
25
10
50
I
D
Drain C urrent-C ontinuous a @ T
-P ulsed b
J
=25 C
A
A
I
DM
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
A
I
S
P
D
W
C
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
J C
J A
3
50
Thermal R esistance, J unction-to-Ambient
R
1
S TU/D1224N
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
24
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 18V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
12V, VDS = 0V
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
V
G ate Threshold Voltage
V
DS =VG S , I
= 250uA
D
0.7
15
1.2
60
1.8
80
m-ohm
=
=
V
V
V
V
G S 4.5V, I
D
D
6.0A
Drain-S ource On-S tate R esistance
R
DS (ON)
m-ohm
90
130
G S =2.5V, I
= 5.2A
DS = 5V, VG S = 4.5V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
10
Forward Transconductance
=
DS
10V, I 6.0A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
C
IS S
528
139
107
V
DS =8V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
Turn-On Delay Time
t
D(ON)
13.7
ns
ns
V
DD = 10V
= 1A
G E N = 4.5V
I
D
R ise Time
tr
8.9
V
R
R
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
ns
nC
25.4
14.1
14.5
L
= 10 ohm
GE N = 6 ohm
tf
V
V
DS =10V,I
D
=6A,VG S =10V
=6A,VG S =4.5V
Q
g
Total G ate C harge
DS =10V,I
D
nC
nC
nC
7.2
1.3
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
V
V
DS =10V, I
G S =10V
D
= 6A
gd
2.1
2
S TU/D1224N
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode F orward Voltage
1
V
S D
V
G S = 0V, Is =10A
1.3
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
25
20
15
10
10
25 C
V
G S =10,9,8,7,6,5,4,3V
8
6
-55 C
Tj=125 C
VG S =2V
4
2
0
5
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
0
2
4
6
8
10
12
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
2.2
1.8
V
G S =4.5V
=6A
1500
I
D
1200
900
1.4
1.0
600
0.6
0.2
0
C iss
300
0
C oss
C rss
0
2
4
6
8
10
12
-50 -25
0
25
50
100 125
Tj( C )
75
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
S TU/D1224N
1.8
1.15
1.10
1.05
V
DS =V G S
ID=250uA
1.6
I
D=250uA
1.4
1.2
1.0
1.00
0.95
0.90
0.85
0.8
0.6
0.4
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
24
20
10
20
16
12
8
4
1
T
J
=25 C
1.2
V
DS =10V
20
0
0
0.4
0.6
0.8
1.0
1.4
0
5
10
15
25
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
10
t
i
m
i
V
DS =10V
=6A
L
)
N
O
(
R DS
8
6
4
I
D
10
1
1
0
m
s
1
0
0
m
s
1
1
s
D
C
V
G S =4.5V
2
0
0.1
S ingle P ulse
T c=25 C
0.03
6
8
0.1
1
10 20
50
0
2
4
10 12 14 16
Qg, T otal G ate C harge (nC )
V
DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S TU/D1224N
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VG S
10%
INVE R TE D
R G E N
G
6
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
1. R θJ A (t)=r (t) * R θJ A
2. R θJ A=S ee Datasheet
3. TJ M-TA = P DM* R θJ A (t)
4. Duty C ycle, D=t1/t2
0.01
S ING LE P ULS E
0.01
10-5
10-4
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
S TU/D1224N
6
S TU/D1224N
5
95
7
35
05
85
0.94
4
9
7
3
41
3
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
1.625
0.850
REF.
6
L2
REF.
0.024
0.600
6
S TU/D1224N
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
T
ψ1.5
+ 0.1
TO-252
(16 ㎜)
6.80
±0.1
2.50
±0.1
1.75
0.1±
10.3
±0.1
16.0
0.3±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
ψ2
-
0
TO-252 Reel
S
UNIT:㎜
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ψ13.0
17.0
+ 1.5
ψ330
± 0.5
2.0
±0.5
ψ97
± 1.0
2.2
10.6
16 ㎜
ψ 330
+
-
0.5
0.2
-
0
8
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