STD1530PL [SAMHOP]
P-Channel E nhancement Mode MOSFET; P沟道é nhancement模式MOSFET型号: | STD1530PL |
厂家: | SAMHOP MICROELECTRONICS CORP. |
描述: | P-Channel E nhancement Mode MOSFET |
文件: | 总8页 (文件大小:850K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S TU/D1530P L
S amHop Microelectronics C orp.
P reliminary Mar.28 2004
P -C hannel E nhancement Mode MOS FE T
FE ATUR E S
PR ODUCT S UMMAR Y
R DS (ON) ( m
Ω
) Max
VDS S
ID
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
45 @ VG S = -10V
60 @ VG S = -4.5V
-20A
-30V
TO-252 and TO-251 P ackage.
D
D
G
G
S
S DU S E R IE S
TO-252AA(D-P AK)
S DD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATING S (T
A
=25 C unless otherwise noted)
P arameter
Limit
-30
Unit
V
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
20
-20
-50
-20
50
I
D
Drain C urrent-C ontinuous a @ T
-P ulsed b
J
=125 C
A
A
A
I
DM
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
I
S
P
D
W
C
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
3
C/W
C/W
R
J C
J A
50
Thermal R esistance, J unction-to-Ambient
R
1
S TU/D1530P L
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
5
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
-30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1
-1.5 -2.5
V
G ate Threshold Voltage
V
DS =VG S , I
=
D
= -250uA
=
35
45
m-ohm
m-ohm
V
V
V
V
G S -10V, I
D
-5.8A
Drain-S ource On-S tate R esistance
R
DS (ON)
50
G S = -4.5V, I
D
= -2.0A
60
-20
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
8
Forward Transconductance
=
DS -15V, I - 5.8A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
809
P
P
P
F
F
F
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
174
101
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
12.3
18.6
69.4
44
Turn-On Delay Time
t
D(ON)
ns
ns
V = -15V,
D
I
D
= -1A,
R ise Time
tr
V
R
R
G E N = - 10V,
G E N = 6 ohm
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
ns
L
= 15 ohm
tf
nC
nC
18.8
9.5
V
V
DS =-15V,I
D
=-5.3A,VG S =-10V
=-5.3A,VG S =-4.5V
Q
g
Total G ate C harge
DS =-15V,I
D
3.9
3.2
G ate-S ource C harge
G ate-Drain C harge
nC
nC
Q
Q
gs
V
V
DS =-15V, I
G S =-10V
D
= -5.3A,
gd
2
S TU/D1530P L
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
5
-1.3
-1
Diode F orward Voltage
V
S D
V
G S = 0V, Is =-15A
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
25
20
15
10
20
-VG S =2V
16
12
Tj=125 C
-VG S =10,9,8,7,6,5,4,3V
8
-VG S =1V
5
0
4
25 C
1.5
-55 C
0
0
0.5
1
2
2.5
3
0
2
4
6
8
10
12
-VDS , Drain-to-S ource Voltage (V)
-VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1200
2.2
1.8
V
I
G S =-10V
=-5.8A
D
1000
800
C iss
1.4
1.0
600
400
0.6
0.2
0
C oss
C rss
200
0
-50 -25
0
25
50
100 125
75
0
5
10
15
20
25
30
-VDS , Drain-to S ource Voltage (V)
TJ , J unction Temperature ( C )
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
S TU/D1530P L
1.3
1.15
1.10
1.05
V
DS =V G S
ID=-250uA
1.2
I
D
=-250uA
1.1
1.0
0.9
1.00
0.95
0.90
0.85
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
20
10
18
15
12
9
6
3
T
J
=25 C
1.2
V
DS =-15V
20 25
1
0
0.4
0.6
0.8
1.0
1.4
0
5
10
15
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
70
10
V
DS =-15V
=-5.3A
t
i
m
i
L
)
50
8
6
4
I
D
N
1
O
(
0
R DS
m
s
1
0
0
m
s
1
s
10
D
C
V
G S =-10V
2
0
1
S ingle P ulse
T c=25 C
0.03
0
3
6
9
12
0.1
1
10 30
60
15 18 21 24
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S TU/D1530P L
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VG S
10%
INVE R TE D
R G E N
G
6
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
1. R θJ A (t)=r (t) * R θJ A
2. R θJ A=S ee Datasheet
3. TJ M-TA = P DM* R θJ A (t)
4. Duty C ycle, D=t1/t2
0.01
S ING LE P ULS E
0.01
10-5
10-4
10-3
10-2
10-1
1
10
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
S TU/D1530PL
6
S TU/D1530PL
5
95
7
35
05
85
0.94
4
9
7
3
41
3
30
3
3
84
5
1
9
9
3
6.00
0
36
BSC
2.29
BSC
1
0.090
82
9.70
398
0.064
33
56
1.425
0.650
0.600
1.625
0.850
REF.
6
L2
REF.
0.024
6
S TU/D1530P L
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
K0
D1
P0
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
T
ψ1.5
+ 0.1
TO-252
(16 ㎜)
6.80
±0.1
2.50
±0.1
1.75
0.1±
10.3
±0.1
16.0
0.3±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
ψ2
-
0
TO-252 Reel
S
UNIT:㎜
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ψ13.0
17.0
+ 1.5
ψ330
± 0.5
2.0
±0.5
ψ97
± 1.0
2.2
10.6
16 ㎜
ψ 330
+
-
0.5
0.2
-
0
8
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