STM7064N [SAMHOP]
N-Channel E nhancement Mode Field Effect Transistor; N沟道é nhancement模式场效应晶体管
| 型号： | STM7064N |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel E nhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：688K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TM7064N
S amHop Microelectronics C orp.
Aug 17,2005
N-C hannel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
@ VG S = 10V
8.5 @ VG S = 4.5V
Ω
) Typ
6
30V
16A
S urface Mount P ackage.
Thermal P ad E xposed with S tandard S OP -8 Outline
Bottom-side
Drain Contact
D
D
D
5
6
7
8
4
3
2
D
D
D
D
G
S
D
D
G
S
S
S OP -8
E xposed
S
S
1
S
1
ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)
A
Limit
30
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
20
I
D
16
Drain C urrent-C ontinuous a @ T
-P ulsed b
J
=25 C
A
50
A
I
DM
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
A
I
S
1.7
3.0
P
D
W
C
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient a
C
/W
R
J A
40
1
S TM7064N
E LE C T R IC AL C HAR AC T E R IS T IC S (T
C
=25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
1
1.6
6
3
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
= 250uA
D
m ohm
m ohm
7.5
10
=
=
G S 10V, I
G S =4.5V, I
DS = 10V, VG S = 10V
D
16A
Drain-S ource On-S tate R esistance
R
DS (ON)
8.5
D
= 12A
30
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
20
Forward Transconductance
=
=
10V, I 8A
DS
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
3200
P
P
P
F
F
F
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
550
320
3.2
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
ohm
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
32
V
DD = 15V
= 1 A
G S = 10V
G E N = 6 ohm
I
D
tr
R ise Time
48
93
30
V
R
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total G ate C harge
V
V
DS =15V, I
D
=16A,VG S =10V
=16A,VGS =4.5V
nC
nC
Q
g
58.6
29
6.5
12
DS =15V, I
D
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =15V, I
G S =10V
D
=16A
gd
2
STM7064N
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
0.74
V
SD
V
GS = 0V, Is = 1.7A
1.3
Notes
a.Surface Mounted on FR4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
15
VGS=10V
20
15
VGS=4.5V
VGS=8V
25 C
10
5
-55 C
VGS=3V
Tj=125 C
10
5
0
0
0
0.7
1.4
2.1
2.8
3.5
4.2
0
0.5
1
2
3
1.5
2.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
12.0
1.6
1.4
VGS=10V
10.0
8.0
ID=16A
VGS=4.5V
VGS=10V
V
GS=4.5V
=12A
1.2
1.0
0.8
0.6
0.4
I
D
6.0
4.0
2.0
0
0
-55
-25
50
75
5
10
15
20
25
125
0
25
100
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance VS.Temperature
Temperature
3
S TM7064N
1.15
1.10
1.2
V
DS =V G S
ID=250uA
1.1
I
D=250uA
1.0
0.9
0.8
0.7
1.05
1.00
0.95
0.90
0.85
0.6
0.5
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
24
20.0
ID=16A
20
16
25 C
10.0
70 C
12
8
125 C
70 C
125 C
25 C
4
0
1.0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
VG S , G ate-S ource Voltage (V)
V S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S TM7064N
5400
10
8
V
DS =15V
4500
I
D
=16A
C iss
3600
6
2700
1800
4
C oss
900
2
0
6
C rss
0
0
5
10
15
20
25
30
24
0
8
16
32 40 48
56 64
VDS , Drain-to S ource Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
Figure 9. C apacitance
80
600
TD(off)
t
i
Tr
1
m
0
m
i
L
s
TD(on)
Tf
10
1
)
N
1
s
O
100
60
0
0
(
R DS
m
s
1
D
C
10
0.1
V
G S =10V
S ingle P ulse
=25 C
V DS =15V ,ID=1A
V G S =10V
1
T
A
0.03
0.1
1
10
30 50
600
60 100 300
1
6
10
V DS , Drain-S ource V oltage (V )
R g, G ate R esistance (
Ω
)
F igure 12. Maximum S afe
Operating Area
F igure 11.switching characteristics
5
S T M7064N
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
5
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
VG S
INVE R TE D
R G E N
G
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
10
1
0.5
0.2
DM
P
0.1
1
t
0.05
0.1
2
t
0.02
0.01
1. R thJ A (t)=r (t) * R thJ A
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
6
S TM7064N
PAC KAG E OUTLINE DIME NS IONS
S OP -8
7
S TM7064N
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
A
B
C
D
E
PACKAGE
SOP 8N
150㏕
5.0
±0.1
4.0
±0.1
6.5
±0.1
1.5
±0.1
12.0
±0.3
SO-8 Reel
UNIT:㎜
REEL SIZE
TAPE SIZE
M
N
W
10
± 0.2
12 ㎜
ψ300
101
300
8
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