首页 |元器件品牌

STUD334S [SAMHOP]

Super high dense cell design for low RDS(ON).;
STUD334S
型号： STUD334S
厂家： SAMHOP MICROELECTRONICS CORP.    SAMHOP MICROELECTRONICS CORP.
描述：

Super high dense cell design for low RDS(ON).
文件： 总8页 (文件大小：155K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
G
P
STU/D339S  
a
S mHop Microelectronics Corp.  
Ver 1.0  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
FEATURES  
Super high dense cell design for low RDS(ON)  
PRODUCT SUMMARY  
.
RDS(ON) (m ) Max  
9.6 @ VGS=10V  
15 @ VGS=4.5V  
VDSS  
ID  
Rugged and reliable.  
TO-±5± and TO-±51 Package.  
40A  
30V  
G
S
S
STU SERIE  
S
STD SERIE  
-
-
)
-
A
P K  
(
)
2 2  
A
P K  
(
5
TO 5 AA  
-
D
2 1 I  
TO  
°
)
(
ABSOLUTE MAXIMUM RATINGS TC=±5 C unless otherwise noted  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Units  
Limit  
30  
V
V
VGS  
±±0  
40  
3±  
°
TC=±5 C  
A
A
ID  
Drain Current-Continuous  
°
TC=70 C  
a
IDM  
A
mJ  
-Pulsed  
117  
56  
c
EAS  
Single Pulse Avalanche Energy  
°
TC=±5 C  
W
W
4±  
±7  
PD  
Maximum Power Dissipation  
°
TC=70 C  
Operating Junction and Storage  
Temperature Range  
-55 to 150  
°C  
TJ, TSTG  
THERMAL CHARACTERISTICS  
R
3
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
°C/W  
°C/W  
JC  
JA  
R
50  
Details are subject to change without notice.  
Aug,17,±01±  
www.samhop.com.tw  
1
STU/D339S  
Ver 1.0  
°
)
(
ELECTRICAL CHARACTERISTICS TC=±5 C unless otherwise noted  
Parameter  
Min  
Max  
Symbol  
Conditions  
Typ  
Units  
OFF CHARACTERISTICS  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
VGS=0V , ID=±50uA  
VDS=±4V , VGS=0V  
VGS= ±±0V , VDS=0V  
30  
V
uA  
nA  
1
±100  
IGSS  
ON CHARACTERISTICS  
VDS=VGS , ID=±50uA  
VGS=10V , ID=±0A  
VGS=4.5V , ID=16A  
VDS=10V , ID=±0A  
1.0  
1.7  
8.±  
3
Gate Threshold Voltage  
V
VGS(th)  
m ohm  
m ohm  
S
9.6  
15  
RDS(ON)  
gFS  
Drain-Source On-State Resistance  
11.5  
55  
Forward Transconductance  
b
DYNAMIC CHARACTERISTICS  
pF  
pF  
pF  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
b
CISS  
COSS  
CRSS  
900  
161  
1±4  
VDS=15V,VGS=0V  
f=1.0MHz  
SWITCHING CHARACTERISTICS  
tD(ON)  
ns  
ns  
ns  
17  
18  
18  
46  
14  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
VDD=15V  
ID=1A  
VGS=10V  
RGEN= 6 ohm  
t
r
tD(OFF)  
t
f
ns  
VDS=15V,ID=±0A,VGS=10V  
VDS=15V,ID=±0A,VGS=4.5V  
nC  
nC  
nC  
nC  
Total Gate Charge  
Qg  
6.5  
1.8  
4.1  
Qgs  
Qgd  
Gate-Source Charge  
Gate-Drain Charge  
VDS=15V,ID=±0A,  
VGS=10V  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Diode Forward Voltage  
VSD  
0.77  
1.3  
VGS=0V,IS=±A  
V
Notes  
_
_
a.Pulse Test:Pulse Width < 300us, Duty Cycle < ±%.  
b.Guaranteed by design, not subject to production testing.  
c.Starting TJ=±5 C,L=0.5mH,VDD = ±0V.(See Figure13)  
°
Aug,17,±01±  
www.samhop.com.tw  
±
STU/D339S  
Ver 1.0  
35  
28  
21  
14  
7
VGS =4.5V  
VGS =5V  
80  
VGS =10V  
VGS =4V  
-55 C  
Tj=125 C  
60  
40  
20  
0
VGS =3.5V  
25 C  
VGS =3V  
2.5  
0
4.8  
0
0.8  
1.6  
2.4  
3.2  
4.0  
0
1.5  
3
0.5  
1
2
VDS, Drain-to-Source Voltage(V)  
VGS, Gate-to-Source Voltage(V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
25  
2.0  
1.8  
1.6  
1.4  
1.2  
20  
15  
10  
5
V
GS =10V  
I
D
=20A  
VGS=4.5V  
VGS=10V  
V
GS =4.5V  
I
D
=16A  
1.0  
0
0
1
20  
40  
60  
80  
75  
125  
150  
0
25  
50  
100  
°
Tj( C )  
ID, Drain Current(A)  
°
Tj, Junction Temperature( C )  
Figure 3. On-Resistance vs. Drain Current  
and Gate Voltage  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature  
1.6  
1.15  
V
DS =VG S  
1.4  
1.2  
1.10  
1.05  
1.00  
ID=250uA  
I
D=250uA  
1.0  
0.8  
0.6  
0.4  
0.2  
0.95  
0.90  
0.85  
-50 -25  
0
25 50 75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
°
°
Tj, Junction Temperature( C )  
Tj, Junction Temperature( C )  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Breakdown Voltage Variation  
with Temperature  
Aug,17,±01±  
www.samhop.com.tw  
3
STU/D339S  
Ver 1.0  
30  
25  
20  
15  
10  
5
20  
10  
ID=20A  
25 C  
125 C  
25 C  
125 C  
75 C  
75 C  
1
0
0
2
4
6
8
10  
0
0.25  
0.50  
0.75  
1.00  
1.25  
VSD, Body Diode Forward Voltage(V)  
VGS, Gate-to-Source Voltage(V)  
Figure 8. Body Diode Forward Voltage  
Variation with Source Current  
Figure 7. On-Resistance vs.  
Gate-Source Voltage  
1200  
1000  
800  
600  
400  
200  
0
10  
V
I
DS=15V  
=20A  
Ciss  
8
6
D
4
2
0
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
10 12  
14 16  
Qg, Total Gate Charge(nC)  
VDS, Drain-to-Source Voltage(V)  
Figure 9. Capacitance  
Figure 10. Gate Charge  
300  
100  
10  
1
100  
10  
1
t
i
m
i
100u  
L
TD(off)  
N)  
s
S (O  
R D  
Tf  
1m  
s
Tr  
1
0
TD(on)  
ms  
DC  
V
GS=10V  
VDS=15V,ID=1A  
VGS=10V  
Single Pulse  
=25 C  
T
A
100  
1
10  
0.1  
1
10  
VDS, Drain-Source Voltage(V)  
Rg, Gate Resistance(Ω)  
Figure 11. switching characteristics  
Figure 12. Maximum Safe Operating Area  
Aug,17,±01±  
www.samhop.com.tw  
4
STU/D339S  
Ver 1.0  
(BR )DSS  
t
p
L
V
DS  
D.U.T  
R
G
+
-
V
DD  
I
AS  
±0V  
0.01  
tp  
I
AS  
Unclamped Inductive Waveforms  
Figure 13b.  
Uncamped Inductive Test Circuit  
Figure 13a.  
2
1
D=0.5  
0.2  
0.1  
DM  
P
0.1  
0.05  
1
t
2
t
0.02  
0.01  
1. R  
2. R  
3. TJM-  
J
JA (t)=r (t) * R  
JA=S ee Datasheet  
= PDM* R JA (t)  
4. Duty Cycle, D=t /t  
J JA  
J
S INGLE PULS E  
10-4  
T
A
J
1
2
0.01  
10-5  
10-3  
10-2  
Square Wave Pulse Duration(sec)  
10-1  
1
10  
Figure 14. Normalized Thermal Transient Impedance Curve  
Aug,17,±01±  
www.samhop.com.tw  
5
STU/D339S  
Ver 1.0  
PACKAGE OUTLINE DIMENSIONS  
TO-251  
Aug,17,±01±  
www.samhop.com.tw  
6
STU/D339S  
Ver 1.0  
E
TO-±5±  
A
b±  
C
L3  
1
D1  
D
E1  
±
H
1
3
DETAIL "A"  
L4  
b1  
e
b
L±  
L
A1  
DETAIL "A"  
L1  
MILLIMETERS  
INCHES  
MAX  
SYMBOLS  
MIN  
MAX  
MIN  
0.086  
0.000  
0.0±5  
0.0±6  
0.±05  
0.018  
0.±35  
0.±13  
0.±5±  
0.193  
0.090  
0.378  
0.05±  
0.105  
0.018  
0.035  
0.0±0  
A
A1  
b
b1  
b±  
C
D
D1  
E
E1  
e
H
L
L1  
L±  
L3  
L4  
±.184  
0.000  
0.633  
0.666  
5.±07  
0.460  
5.969  
5.415  
6.400  
4.90±  
±.±86  
9.601  
1.313  
±.666  
0.460  
0.889  
0.508  
±.388  
0.1±7  
0.889  
1.09±  
5.461  
0.584  
6.±±3  
5.515  
6.731  
5.004  
0.094  
0.005  
0.035  
0.043  
0.±15  
0.0±3  
0.±45  
0.±17  
0.±65  
0.197  
BSC  
BSC  
10.±86  
1.651  
3.174  
0.560  
1.143  
1.016  
0.405  
0.065  
0.1±5  
0.0±±  
0.045  
0.040  
°
°
°
°
°
8
8
0
0
°
7
REF.  
1
7
REF.  
Aug,17,±01±  
www.samhop.com.tw  
7
STU/D339S  
Ver 1.0  
TO-±51 Tube/TO-±5± Tape and Reel Data  
TO-±51 Tube  
0.4  
7.50  
1.±5  
+
540 1.5  
4.5  
±~ӿ3.0  
6.60  
" A"  
19.75  
TO-±5± Carrier Tape  
P1  
P±  
D1  
T
FEED DIRECTION  
K0  
A0  
D0  
P0  
UNIT:р  
K0  
D1  
P1  
P±  
PACKAGE  
A0  
B0  
D0  
E
E1  
E±  
P0  
T
ӿ1.5  
TO-±5±  
(16 р*  
6.96  
²0.1  
10.49  
²0.1  
±.79  
²0.1  
16.0  
²0.3  
7.5  
²0.15  
8.0  
²0.1  
4.0  
²0.1  
±.0  
²0.15  
0.3  
²0.05  
1.75  
²0.1  
ӿ±  
+ 0.1  
-
0
TO-±5± Reel  
T
S
G
V
R
H
W
UNIT:р  
T
N
W
R
M
H
S
G
K
V
TAPE SIZE  
REEL SIZE  
ӿ13.0  
17.0  
ӿ330  
² 0.5  
±.0  
²0.5  
ӿ97  
² 1.0  
±.±  
10.6  
16 р  
ӿ 330  
+
-
0.5  
0.±  
+ 1.5  
-
0
Aug,17,±01±  
www.samhop.com.tw  
8

相关型号：

STUD339S

 Super high dense cell design for low RDS(ON).
SAMHOP

STUDIOWORKS57I

 Monitor_ICs:MC68HC05BD16
ETC

STUDIOWORKS57I(NEW)

 Monitor_ICs:MC68HC05BD16
ETC

STUDIOWORKS7D

 Monitor_ICs:ST6371B1J2 LSC4360P 24LC2110A KIA358P KA393
ETC

STUDIOWORKS995U(CB995BU)

 Monitor_ICs:VPS13 M62501P UPC1884ACT PQ6RD083
ETC

STUDIOWORKS99T

 Monitor_ICs:KA4558 KIA358P STR83145 T7272 TLP733F(D4-GR) TOP210PFI
ETC

STUF32864EHLF

 D Flip-Flop, SSTU Series, 1-Func, Positive Edge Triggered, 25-Bit, True Output, PBGA96, MO-205CC, BGA-96
IDT

STUF32864EHLFT

 D Flip-Flop, SSTU Series, 1-Func, Positive Edge Triggered, 25-Bit, True Output, PBGA96, MO-205CC, BGA-96
IDT

STUGCA

 Voltage-Controlled Oscillator
ETC

STUGCA-1.024

 Crystal Oscillator
ETC

STUGCA-1.024MHZ

 CMOS/TTL Output Clock Oscillator, 1.024MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-6
MICROSEMI

STUGCA-1.544

 Crystal Oscillator
ETC
©2020 ICPDF网 联系我们和版权申明