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元器件品牌
STG8211
[SAMHOP]
Dual N-Channel E nhancement Mode Field Effect Transistor; 双N信道E nhancement模式场效应晶体管
元器件型号：
STG8211
生产厂家：
SAMHOP MICROELECTRONICS CORP.
描述和应用：
Dual N-Channel E nhancement Mode Field Effect Transistor
双N信道E nhancement模式场效应晶体管
晶体 晶体管 场效应晶体管
PDF文件：
总8页 (文件大小：879K)
下载文档：
下载PDF数据表文档文件
型号参数：STG8211参数
查看货源
STG8810
Dual N-Channel Enhancement Mode Field Effect Transistor
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156
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86
SAMHOP
STGAP1AS
Automotive galvanically isolated advanced single gate driver
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156
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5
STMICROELECTR
STGAP1ASTR
Automotive galvanically isolated advanced single gate driver
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on line
156
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0
STMICROELECTR
STGB10HF60KDT4
20A, 600V, N-CHANNEL IGBT, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
STMICROELECTR
STGB10N60L
N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT
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40
STMICROELECTR
STGB10N60L
25A, 600V, N-CHANNEL IGBT, TO-263, D2PAK-3
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156
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0
STMICROELECTR
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
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81
STMICROELECTR
STGB10NB37LZ
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
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: Undefined variable $rtag in
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95
STMICROELECTR
STGB10NB37LZ_01
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
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: Undefined variable $rtag in
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26
STMICROELECTR
STGB10NB37LZT4
TRANSISTOR | IGBT | N-CHAN | 20A I(C) | TO-263AB
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41
ETC
STGB10NB40LZ
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
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125
STMICROELECTR
STGB10NB40LZT4
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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82
STMICROELECTR
STGB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
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156
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43
STMICROELECTR
STGB10NB60ST4
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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19
STMICROELECTR
STGB10NC60HD
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
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21
STMICROELECTR
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