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IRF120 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
IRF120
元器件型号： IRF120
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
PDF文件： 总5页 (文件大小：217K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF120参数
 查看货源

IRF120-123

 N-Channel Power MOSFETs, 11 A, 60-100 V

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119 FAIRCHILD

IRF1205

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926 ETC

IRF120E

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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3 IRF

IRF120EA

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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1 IRF

IRF120EB

 Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

IRF120PBF

 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

IRF121

 N-Channel Power MOSFETs, 11 A, 60-100 V

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177 FAIRCHILD

IRF121

 N-CHANNEL POWER MOSFETS

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90 SAMSUNG

IRF121

 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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84 INTERSIL

IRF122

 N-Channel Power MOSFETs, 11 A, 60-100 V

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75 FAIRCHILD

IRF122

 N-CHANNEL POWER MOSFETS

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44 SAMSUNG

IRF122

 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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61 INTERSIL

IRF122

 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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2 IRF

IRF-122+/-10%

 General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-122+/-10%

 General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY
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