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IRF133 [SAMSUNG]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
IRF133
元器件型号： IRF133
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PDF文件： 总7页 (文件大小：509K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF133参数
 查看货源

IRF-133+/-10%

 General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF133R

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-204AA

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25 ETC

IRF135S203

 Power Field-Effect Transistor

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2 INFINEON

IRF1360

 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-259AA

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80 ETC

IRF-14.7+/-10%

 General Fixed Inductor, 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-14.7+/-10%

 General Fixed Inductor, 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-14.710%

 General Fixed Inductor, 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

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0 VISHAY

IRF-14.7UH+/-10%

 General Fixed Inductor, 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-14.7UH+-10%ESE2

 General Purpose Inductor, 4.7uH, 10%, Ferrite-Core,

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0 VISHAY

IRF-14.7UH+-5%ESE2

 General Purpose Inductor, 4.7uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-14.7UH+-5%ESE2

 General Purpose Inductor, 4.7uH, 5%, Ferrite-Core,

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0 VISHAY

IRF140

 N-CHANNEL POWER MOSFETS

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111 SAMSUNG

IRF140

 N-CHANNEL POWER MOSFET

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78 SEME-LAB

IRF140

 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

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90 INTERSIL

IRF140

 TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

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204 IRF
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