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元器件品牌
IRF231
[SAMSUNG]
N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
元器件型号：
IRF231
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管
PDF文件：
总5页 (文件大小：216K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF231参数
查看货源
IRF231R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 9A I(D) | TO-204AA
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20
ETC
IRF232
N-Channel Power MOSFETs, 12A, 150-200 V
Warning
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156
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93
FAIRCHILD
IRF232
N-CHANNEL POWER MOSFETS
Warning
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156
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50
SAMSUNG
IRF232
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Warning
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49
INTERSIL
IRF232
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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0
VISHAY
IRF232
8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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0
RENESAS
IRF232R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA
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12
ETC
IRF233
N-Channel Power MOSFETs, 12A, 150-200 V
Warning
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156
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29
FAIRCHILD
IRF233
N-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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30
SAMSUNG
IRF233
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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28
INTERSIL
IRF233
Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
VISHAY
IRF233
8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Warning
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156
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0
RENESAS
IRF233R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | TO-204AA
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156
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8
ETC
IRF234
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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198
INTERSIL
IRF234
Power Field-Effect Transistor, 8.4A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Warning
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on line
156
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2
IRF
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