IRF521 [SAMSUNG]
Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;型号: | IRF521 |
厂家: | SAMSUNG SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
文件: | 总1页 (文件大小:45K) |
下载: | 下载PDF数据表文档文件 |
IRF5210
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1741
IRF
IRF5210
Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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61
IRF
IRF521-002
Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRF5210L
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
233
IRF
IRF5210LHR
Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
IRF
IRF5210LPBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
106
IRF
IRF5210PBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
269
IRF
IRF5210S
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
812
IRF
IRF5210SPBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
182
IRF
IRF5210STRL
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
100
ETC
IRF5210STRLHR
Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
IRF
IRF5210STRLPBF
Advanced Process TechnologyWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
77
IRF
IRF5210STRR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
53
ETC
IRF5210STRRPBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRF521FI
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
40
ETC
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