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元器件品牌
IRF532
[SAMSUNG]
N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
元器件型号：
IRF532
生产厂家：
SAMSUNG SEMICONDUCTOR
描述和应用：
N-CHANNEL POWER MOSFETS
N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管
PDF文件：
总6页 (文件大小：358K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF532参数
查看货源
IRF532-001
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-002
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-003
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-004
暂无描述
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on line
156
-
0
IRF
IRF532-006
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-010
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-011
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-012
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-012PBF
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532-013
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRF532FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
30
STMICROELECTR
IRF532FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
5
STMICROELECTR
IRF532FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
20
STMICROELECTR
IRF532FI
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
9
STMICROELECTR
IRF532FI
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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10
STMICROELECTR
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