IRF721 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
IRF721
型号: IRF721
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

N-CHANNEL POWER MOSFETS
N沟道功率MOSFET

文件: 总5页 (文件大小:277K)
下载:  下载PDF数据表文档文件

IRF7210

TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 16A I(D) | SO

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153 ETC

IRF7210

HEXFET Power MOSFET

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138 IRF

IRF721-004PBF

Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF721-006PBF

Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF721-009PBF

Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF721-010PBF

Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF721-012PBF

Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF7210PBF

HEXFET Power MOSFET

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73 IRF

IRF721FI

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-220AB

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31 ETC

IRF721R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-220AB

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33 ETC

IRF722

TRANSISTORS N-CHANNEL

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36 IRF

IRF722

N-Channel Power MOSFETs, 3.0 A, 350-400 V

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28 FAIRCHILD

IRF722

Power Field-Effect Transistor, 2.5A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 VISHAY

IRF7220

HEXFET Power MOSFET

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206 IRF

IRF7220GPBF

Power Field-Effect Transistor, 11A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8

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1 IRF