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IRF9531 [SAMSUNG]

P-CHANNEL POWER MOSFETS; P沟道功率MOSFET
IRF9531
元器件型号： IRF9531
生产厂家： SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用：

P-CHANNEL POWER MOSFETS
P沟道功率MOSFET
PDF文件： 总6页 (文件大小：382K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF9531参数
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IRF9532

 TRANSISTORS

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89 IRF

IRF9532

 P-CHANNEL POWER MOSFETS

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68 SAMSUNG

IRF9532

 P-CHANNEL POWER MOSFETS

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76 SAMSUNG

IRF9532

 Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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5 VISHAY

IRF9532

 Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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8 SAMSUNG

IRF9533

 TRANSISTORS

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67 IRF

IRF9533

 P-CHANNEL POWER MOSFETS

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48 SAMSUNG

IRF9533

 P-CHANNEL POWER MOSFETS

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40 SAMSUNG

IRF9533

 Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRF9533

 Power Field-Effect Transistor, 10A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF9533

 10A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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2 ROCHESTER

IRF9533

 Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9533-006PBF

 Power Field-Effect Transistor, 10A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 INFINEON

IRF9540

 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

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864 INTERSIL

IRF9540

 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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1438 IRF
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