IRF9Z12 [SAMSUNG]
Power Field-Effect Transistor, 4A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 型号： | IRF9Z12 |
| 厂家： | 
SAMSUNG |
| 描述： | Power Field-Effect Transistor, 4A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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