IRFP132 [SAMSUNG]

Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN;
IRFP132
型号: IRFP132
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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IRFP133

N-CHANNEL POWER MOSFETS

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32 SAMSUNG

IRFP140

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247AC

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447 ETC

IRFP140

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

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412 FAIRCHILD

IRFP140

Power MOSFET

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262 VISHAY

IRFP1405

AUTOMOTIVE MOSFET

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306 IRF

IRFP1405

AUTOMOTIVE MOSFET

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141 IRF

IRFP1405PBF

HEXFET㈢ Power MOSFET

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92 IRF

IRFP140A

Advanced Power MOSFET

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69 FAIRCHILD

IRFP140N

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

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180 INTERSIL

IRFP140N

Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)

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279 IRF

IRFP140NPBF

HEXFET Power MOSFET

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115 IRF

IRFP140N-R4942

Transistor

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0 FAIRCHILD

IRFP140PBF

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

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31 IRF

IRFP140PBF

Power MOSFET

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23 VISHAY

IRFP140PBF

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

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21 IRF