IRFP421 [SAMSUNG]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
IRFP421
元器件型号: IRFP421
生产厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述和应用:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

PDF文件: 总7页 (文件大小:527K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFP421参数

IRFP4227PBF

PDP SWITCH

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927 IRF

IRFP4228PBF

pop switch

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162 IRF

IRFP4229PBF

PDP SWITCH

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251 IRF

IRFP423

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 SAMSUNG

IRFP4232PBF

PDP MOSFET

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948 IRF

IRFP4232PBF

Advanced process technology

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220 IRF

IRFP4232PBF_07

Advanced process technology

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27 IRF

IRFP4242PBF

PDP MOSFET

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473 IRF

IRFP430

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-247VAR

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103 ETC

IRFP431

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-247VAR

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22 ETC

IRFP4310Z

N-Channel MOSFET Transistor

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2 ISC

IRFP4310ZPBF

HEXFET Power MOSFET

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336 IRF

IRFP432

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-247VAR

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48 ETC

IRFP432

Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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1 SAMSUNG

IRFP4321PBF

HEXFET Power MOSFET

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259 IRF