关闭背景特效

IRFR015-T1 [SAMSUNG]

Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;

IRFR015-T1


元器件型号：	IRFR015-T1
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 开关脉冲晶体管
PDF文件：	总5页 (文件大小：169K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR015-T1参数

IRFR020

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 15A I(D) | TO-252AA

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115 ETC

IRFR020

HEXFETR Power MOSFET

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140 IRF

IRFR020

Power MOSFET

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6 VISHAY

IRFR020

Power MOSFET

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20 VISHAY

IRFR020

Power MOSFET

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58 VISHAY

IRFR020_10

Power MOSFET

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11 VISHAY

IRFR020PBF

Power MOSFET

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15 VISHAY

IRFR020PBF

Power MOSFET

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29 VISHAY

IRFR020TR

Power MOSFET

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26 VISHAY

IRFR020TR

Power MOSFET

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17 VISHAY

IRFR020TR

Power MOSFET

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8 KERSEMI

IRFR020TRL

Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR020TRLPBF

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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0 VISHAY

IRFR020TRPBF

Power MOSFET

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25 VISHAY

IRFR020TRPBF

Power MOSFET

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7 VISHAY

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