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IRFR121-T1 [SAMSUNG]

Power Field-Effect Transistor, 8.4A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;

IRFR121-T1


元器件型号：	IRFR121-T1
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 8.4A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 开关脉冲晶体管
PDF文件：	总5页 (文件大小：168K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR121-T1参数

IRFR12N25D

SMPS MOSFET

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23 IRF

IRFR12N25D

SMPS MOSFET

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62 IRF

IRFR12N25DHR

暂无描述

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0 IRF

IRFR12N25DPBF

HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A )

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38 IRF

IRFR12N25DPBF

SMPS MOSFET

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17 KERSEMI

IRFR12N25DTR

Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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0 IRF

IRFR12N25DTRL

Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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0 IRF

IRFR12N25DTRLP

Transistor

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0 INFINEON

IRFR12N25DTRR

暂无描述

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0 IRF

IRFR12N25DTRRPBF

暂无描述

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0 IRF

IRFR130

Advanced Power MOSFET

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43 FAIRCHILD

IRFR130

Advanced Power MOSFET

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49 FAIRCHILD

IRFR130A

Advanced Power MOSFET

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50 FAIRCHILD

IRFR130A

Advanced Power MOSFET

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14 FAIRCHILD

IRFR130A

Advanced Power MOSFET

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18 FAIRCHILD

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