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IRFR9014-T1 [SAMSUNG]

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;

IRFR9014-T1


元器件型号：	IRFR9014-T1
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 开关脉冲晶体管
PDF文件：	总5页 (文件大小：168K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR9014-T1参数

IRFR9014TR

Power MOSFET

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45 VISHAY

IRFR9014TRA

Power MOSFET

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18 KERSEMI

IRFR9014TRL

Power MOSFET

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25 VISHAY

IRFR9014TRL

HEXFET Power MOSFET

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49 IRF

IRFR9014TRL

HEXFET Power MOSFET

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19 IRF

IRFR9014TRLA

Power MOSFET

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1 KERSEMI

IRFR9014TRLPBF

Power MOSFET

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25 VISHAY

IRFR9014TRLPBFA

Power MOSFET

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1 KERSEMI

IRFR9014TRPBF

Power MOSFET

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44 VISHAY

IRFR9014TRPBFA

Power MOSFET

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1 KERSEMI

IRFR9014TRR

Power MOSFET

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1 KERSEMI

IRFR9014TRRPBF

Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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0 IRF

IRFR9014TRRPBF

Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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1 VISHAY

IRFR9015

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4.5A I(D) | TO-252AA

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103 ETC

IRFR9015-T1

Power Field-Effect Transistor, 4.5A I(D), 60V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

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