IRFR9020-T1 [SAMSUNG]

Power Field-Effect Transistor, 9.9A I(D), 50V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;
IRFR9020-T1
型号: IRFR9020-T1
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 9.9A I(D), 50V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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文件: 总5页 (文件大小:170K)
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IRFR9020TR

Power MOSFET

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29 VISHAY

IRFR9020TRA

Power MOSFET

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1 KERSEMI

IRFR9020TRL

Power MOSFET

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24 VISHAY

IRFR9020TRLA

Power MOSFET

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1 KERSEMI

IRFR9020TRLPBF

Power MOSFET

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16 VISHAY

IRFR9020TRLPBFA

Power MOSFET

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1 KERSEMI

IRFR9020TRPBF

Power MOSFET

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25 VISHAY

IRFR9020TRPBFA

Power MOSFET

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1 KERSEMI

IRFR9020TRR

Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR9022

Power MOSFET

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43 VISHAY

IRFR9022

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

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49 IRF

IRFR9022PBF

Power MOSFET

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14 VISHAY

IRFR9022TR

Power MOSFET

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17 VISHAY

IRFR9022TRL

Power MOSFET

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24 VISHAY

IRFR9022TRLPBF

Power MOSFET

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12 VISHAY