IRFS130 [SAMSUNG]

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN;
IRFS130
型号: IRFS130
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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IRFS131

Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS132

Power Field-Effect Transistor, 8.3A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS133

Power Field-Effect Transistor, 8.3A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS140

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D) | SOT-186VAR

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29 ETC

IRFS140A

Advanced Power MOSFET

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17 FAIRCHILD

IRFS141

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 19.4A I(D) | SOT-186VAR

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19 ETC

IRFS142

Power Field-Effect Transistor, 17.3A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS142

Power Field-Effect Transistor, 17.3A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS143

Power Field-Effect Transistor, 17.3A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS143

Power Field-Effect Transistor, 17.3A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS150

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 27.7A I(D) | SOT-186VAR

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33 ETC

IRFS150A

Advanced Power MOSFET

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27 FAIRCHILD

IRFS151

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 27.7A I(D) | SOT-186VAR

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12 ETC

IRFS152

Power Field-Effect Transistor, 23.5A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG

IRFS152

Power Field-Effect Transistor, 23.5A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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0 SAMSUNG