IRFS9142 [SAMSUNG]

Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN;
IRFS9142
型号: IRFS9142
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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IRFS9143

Power Field-Effect Transistor, 10.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

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1 SAMSUNG

IRFS9240

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7.6A I(D) | SOT-186VAR

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19 ETC

IRFS9241

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7.6A I(D) | SOT-186VAR

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13 ETC

IRFS9520

Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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-
0 SAMSUNG

IRFS9521

Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9522

Power Field-Effect Transistor, 5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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-
1 SAMSUNG

IRFS9523

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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-
0 SAMSUNG

IRFS9523

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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-
0 SAMSUNG

IRFS9530

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | SOT-186

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35 ETC

IRFS9530

Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 SAMSUNG

IRFS9531

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | SOT-186

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14 ETC

IRFS9531

Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 SAMSUNG

IRFS9533

Power Field-Effect Transistor, 10A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS9540

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 10.7A I(D) | SOT-186

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66 ETC

IRFS9540

Power Field-Effect Transistor, 10.7A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG