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IRFU9024 [SAMSUNG]

Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3;

IRFU9024


元器件型号：	IRFU9024
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 开关脉冲晶体管
PDF文件：	总1页 (文件大小：31K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU9024参数

IRFU9024N

HEXFETÂ® Power MOSFET

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19 SHENZHENFREES

IRFU9024N

Ultra Low On-Resistance

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46 KERSEMI

IRFU9024N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

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326 IRF

IRFU9024NC

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3

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0 IRF

IRFU9024NC

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3

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2 INFINEON

IRFU9024NCPBF

ULTRA LOW ON-RESISTANCE

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14 KERSEMI

IRFU9024NCPBF

HEXFET Power MOSFET

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19 KERSEMI

IRFU9024NCPBF

HEXFET POWER MOSFET

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57 IRF

IRFU9024NCPBF

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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0 INFINEON

IRFU9024NPBF

HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175ヘ , ID = -11A )

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87 IRF

IRFU9024NPBF

ULTRA LOW ON-RESISTANCE

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14 KERSEMI

IRFU9024NPBF

ULTRA LOW ON-ORSISTANCE

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25 KERSEMI

IRFU9024PBF

Power MOSFET

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9 KERSEMI

IRFU9024PBF

Power MOSFET

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9 KERSEMI

IRFU9024PBF

Power MOSFET

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4 KERSEMI

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