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IRFU9111 [SAMSUNG]

Power Field-Effect Transistor, 3.2A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3;

IRFU9111


元器件型号：	IRFU9111
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 3.2A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 晶体管
PDF文件：	总1页 (文件大小：33K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU9111参数

IRFU9120

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

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284 IRF

IRFU9120

5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

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92 INTERSIL

IRFU9120

Power MOSFET

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65 VISHAY

IRFU9120

Power MOSFET

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11 KERSEMI

IRFU9120

Power MOSFET

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13 KERSEMI

IRFU9120

Power MOSFET

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47 KERSEMI

IRFU9120

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

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6 IRF

IRFU9120

Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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5 SAMSUNG

IRFU9120_R4941

Transistor

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2 FAIRCHILD

IRFU9120N

HEXFETÂ® Power MOSFET

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17 SHENZHENFREES

IRFU9120N

Ultra Low On-Resistance

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19 KERSEMI

IRFU9120N

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

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132 IRF

IRFU9120NPBF

HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A )

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84 IRF

IRFU9120NPBF

ULTRA LOW ON-RESISTANCE

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25 KERSEMI

IRFU9120NPBF

HEXFET POWER MOSFET

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9 KERSEMI

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