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IRFU9212 [SAMSUNG]

Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;

IRFU9212


元器件型号：	IRFU9212
生产厂家：	SAMSUNG SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 脉冲晶体管
PDF文件：	总1页 (文件大小：33K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU9212参数

IRFU9214

Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

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29 IRF

IRFU9214

Power MOSFET

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15 VISHAY

IRFU9214

Power MOSFET

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14 KERSEMI

IRFU9214

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3

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2 VISHAY

IRFU9214N

TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-251AA

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7 ETC

IRFU9214PBF

Power MOSFET

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17 KERSEMI

IRFU9214PBF

Power MOSFET

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12 VISHAY

IRFU9214PBF

HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A )

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14 IRF

IRFU9214PBF

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3

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0 VISHAY

IRFU9214PBF

Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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0 IRF

IRFU9220

Power MOSFET

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22 KERSEMI

IRFU9220

Power MOSFET

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16 KERSEMI

IRFU9220

Power MOSFET

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48 VISHAY

IRFU9220

Dynamic dV/dt Rating

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21 KERSEMI

IRFU9220

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)

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103 IRF

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