IRFZ40 [SAMSUNG]
N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
| 型号： | IRFZ40 |
| 厂家： | 
SAMSUNG |
| 描述： | N-CHANNEL POWER MOSFETS |
| 文件： | 总5页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFZ40-001PBF
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-002
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-004
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFZ40-004PBF
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-005
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-005PBF
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-006
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-009
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-009PBF
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-010
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ40-010PBF
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
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