IRFZ45 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET
IRFZ45
型号: IRFZ45
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

N-CHANNEL POWER MOSFETS
N沟道功率MOSFET

文件: 总5页 (文件大小:198K)
下载:  下载PDF数据表文档文件

IRFZ45-001

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFZ45-002PBF

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFZ45-003

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFZ45-006PBF

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFZ45-011PBF

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFZ45-013

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFZ45-013PBF

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFZ46

Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A)

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88 IRF

IRFZ46

Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)

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92 IRF

IRFZ46

Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A)

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281 IRF

IRFZ46-005

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRFZ46-005PBF

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRFZ46-009

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRFZ46-009PBF

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRFZ46-015PBF

Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY