IRLU220A [SAMSUNG]

Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
IRLU220A
型号: IRLU220A
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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文件: 总6页 (文件大小:164K)
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IRLU220ATU

Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

IRLU221

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-251

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7 ETC

IRLU224

Power Field-Effect Transistor, 3.3A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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0 SAMSUNG

IRLU230A

ADVANCED POWER MOSFET

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17 FAIRCHILD

IRLU230A

ADVANCED POWER MOSFET

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22 FAIRCHILD

IRLU230A

Advanced Power MOSFET

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13 FAIRCHILD

IRLU230ATU

Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

IRLU2703

POWER MOSFET

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39 IRF

IRLU2703

POWER MOSFET

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26 IRF

IRLU2703

HEXFET Power MOSFET(210.97 k)

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38 ETC

IRLU2703PBF

Logic-Level Gate Drive

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0 IRF

IRLU2705

HEXFET POWER MOSFET

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28 IRF

IRLU2705

HEXFET POWER MOSFET

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26 IRF

IRLU2705

Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

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0 IRF

IRLU2705PBF

HEXFET Power MOSFET

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27 IRF