K1B5616B2M-K3700 [SAMSUNG]

DRAM;

K1B5616B2M-K3700


型号：	K1B5616B2M-K3700
厂家：	SAMSUNG SEMICONDUCTOR
描述：	DRAM 动态存储器
文件：	总42页 (文件大小：1292K)
下载：	下载PDF数据表文档文件

K1B5616B2M-W1700

DRAM

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0 SAMSUNG

K1B5616B2M-W2700

DRAM

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0 SAMSUNG

K1B5616B2M-W3700

DRAM

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0 SAMSUNG

K1B5616BAM

DRAM

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0 SAMSUNG

K1B6416B2D-BI700

Memory IC, 4MX16, CMOS, PBGA54

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-

0 SAMSUNG

K1B6416B2D-FI700

Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48

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0 SAMSUNG

K1B6416B2D-FI70T

Memory IC, 4MX16, CMOS, PBGA54

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0 SAMSUNG

K1B6416B6C

4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

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623 SAMSUNG

K1B6416B6C

4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

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78 SAMSUNG

K1B6416B8D-BI70T

Memory IC, 4MX16, CMOS, PBGA54

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0 SAMSUNG

K1B6416B8D-FI700

Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48

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0 SAMSUNG

K1B6416B8D-FI70T

Memory IC, 4MX16, CMOS, PBGA54

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0 SAMSUNG

K1C3216B8E-FI700

DRAM, 2MX16, 70ns, CMOS, PBGA54

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-

0 SAMSUNG

K1C6416B2D-BI70T

Memory IC, 4MX16, CMOS, PBGA54

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0 SAMSUNG

K1C6416B2D-I0000

Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 MM PITCH, FBGA-54

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0 SAMSUNG

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