K3N3C3000D-YE100 [SAMSUNG]
MASK ROM, 512KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32;型号: | K3N3C3000D-YE100 |
厂家: | SAMSUNG |
描述: | MASK ROM, 512KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 有原始数据的样本ROM 光电二极管 内存集成电路 |
文件: | 总3页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
K3N3C3000D-YC(E)
CMOS MASK ROM
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
GENERAL DESCRIPTION
The K3N3C3000D-YC(E) is a fully static mask programmable
ROM organized 524,288 x 8bit. It is fabricated using silicon
gate CMOS process technology.
· 524,288 x 8 bit organization
· Access time : 80ns(Max.)
· Supply voltage : single +5V
· Current consumption
Operating : 50mA(Max.)
Standby : 50mA(Max.)
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
· Package
The K3N3C3000D-YC(E) is packaged in a 32-TSOP1.
-. K3N3C3000D-YC(E) : 32-TSOP1-0820
FUNCTIONAL BLOCK DIAGRAM
PRODUCT INFORMATION
Operating
Temp Range
Vcc Range Speed
Product
A18
(Typical)
(ns)
X
MEMORY CELL
MATRIX
BUFFERS
AND
.
.
.
.
.
.
.
.
K3N3C3000D-YC
K3N3C3000D-YE
0°C~70°C
5.0V
80
(524,288x8)
-20°C~85°C
DECODER
Y
SENSE AMP.
BUFFERS
BUFFERS
AND
PIN CONFIGURATION
DECODER
A0
. . .
A11
#1
OE
#32
A9
A8
A10
CE
Q7
Q6
Q5
Q4
Q3
VSS
Q2
Q1
Q0
A0
CE
OE
Q0
Q7
CONTROL
LOGIC
A13
A14
A17
N.C
VCC
32-TSOP1
A18
A16
A15
A12
A7
Pin Name
A0 - A18
Q0 - Q7
CE
Pin Function
Address Inputs
Data Outputs
Chip Enable
Output Enable
Power(+5V)
Ground
A6
A1
A5
A2
#16
#17
A4
A3
OE
K3N3C3000D-YC(E)
VCC
VSS
N.C
No Connection
K3N3C3000D-YC(E)
CMOS MASK ROM
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
-0.3 to +7.0
-10 to +85
-55 to +150
0 to +70
Unit
Remark
Voltage on Any Pin Relative to VSS
Temperature Under Bias
Storage Temperature
VIN
V
-
TBIAS
TSTG
°C
°C
°C
°C
-
-
K3N3C3000D-YC
K3N3C3000D-YE
Operating Temperature
TA
-20 to +85
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
RECOMMENDED OPERATING CONDITIONS(Voltage reference to VSS)
Item
Supply Voltage
Symbol
Min
4.5
0
Typ
5.0
0
Max
5.5
0
Unit
V
VCC
Supply Voltage
VSS
V
DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Cycle=5MHz, all outputs open
CE=OE=VIL, VIN=0.6V to 2.4V (AC Test Condition)
CE=VIH, all outputs open
CE=VCC, all outputs open
VIN=0 to VCC
Min
Max
Unit
Operating Current
ICC
-
50
mA
Standby Current(TTL)
mA
mA
mA
mA
V
ISB1
ISB2
ILI
-
-
1
50
Standby Current(CMOS)
Input Leakage Current
-
10
Output Leakage Current
Input High Voltage, All Inputs
Input Low Voltage, All Inputs
Output High Voltage Level
Output Low Voltage Level
ILO
VOUT=0 to VCC
-
10
VIH
VIL
2.2
-0.3
2.4
-
VCC+0.3
0.8
V
VOH
VOL
IOH=-400mA
-
V
IOL=2.1mA
0.4
V
NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
MODE SELECTION
CE
OE
X
Mode
Data
High-Z
High-Z
Dout
Power
Standby
Active
H
Standby
Operating
Operating
H
L
L
Active
CAPACITANCE(TA=25°C, f=1.0MHz)
Item
Output Capacitance
Input Capacitance
Symbol
Test Conditions
VOUT=0V
Min
Max
10
Unit
COUT
CIN
-
-
pF
pF
VIN=0V
10
NOTE : Capacitance is periodically sampled and not 100% tested.
K3N3C3000D-YC(E)
CMOS MASK ROM
AC CHARACTERISTICS(VCC=5V±10%, unless otherwise noted.)
TEST CONDITIONS
Item
Value
Input Pulse Levels
0.6V to 2.4V
10ns
Input Rise and Fall Times
Input and Output timing Levels
0.8V and 2.0V
Output Loads
1 TTL Gate and CL=100pF
READ CYCLE
K3N3C3000D-YC(E)08 K3N3C3000D-YC(E)10 K3N3C3000D-YC(E)12
Item
Symbol
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
tACE
tAA
80
100
120
ns
ns
ns
ns
Chip Enable Access Time
Address Access Time
Output Enable Access Time
80
80
40
100
100
50
120
120
60
tOE
Output or Chip Disable to
Output High-Z
tDF
20
20
20
ns
ns
Output Hold from Address Change
tOH
0
0
0
TIMING DIAGRAM
READ
ADD2
ADD1
ADD
tRC
tDF(Note)
tACE
CE
tOE
tAA
OE
tOH
VALID DATA
VALID DATA
DOUT
NOTE : tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced to VOH or
VOL level.
相关型号:
©2020 ICPDF网 联系我们和版权申明